IRF734 Search Results

ic 94101

Abstract: innovative dro IRF7342D2
Contextual Info: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V

IRF1010

Abstract: IRF734 SS452
Contextual Info: PD-9.999 International H ü Rectifier IRF734 HEXFET Pow er M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration H E X F E T s from International R ectifier provide the de sig ner

Contextual Info: PD-95973 IRF734PbF • Lead-Free Document Number: 91049 12/20/04 www.vishay.com 1 IRF734PbF Document Number: 91049 www.vishay.com 2 IRF734PbF Document Number: 91049 www.vishay.com 3 IRF734PbF Document Number: 91049 www.vishay.com 4 IRF734PbF Document Number: 91049

IRF7342

Contextual Info: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V

IRF7342PbF

Contextual Info: PD - 95200 IRF7342PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2

IRF P CHANNEL MOSFET

Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
Contextual Info: PD - 96110 IRF7343QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET

51A SO8

Contextual Info: IRF7341QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: IRF7342QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

IRF7343

Abstract: IR*343
Contextual Info: PD -91709 IRF7343 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P -C H A N N E L M O S F E T

Contextual Info: PD-95973 IRF734PbF • Lead-Free Document Number: 91049 12/20/04 www.vishay.com 1 IRF734PbF Document Number: 91049 www.vishay.com 2 IRF734PbF Document Number: 91049 www.vishay.com 3 IRF734PbF Document Number: 91049 www.vishay.com 4 IRF734PbF Document Number: 91049

IRF734

Abstract: SiHF734-E3
Contextual Info: IRF734, SiHF734 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 45 Qgs (nC) 6.6 Qgd (nC) 24 Configuration • Repetitive Avalanche Rated 1.2 • Simple Drive Requirements • Lead (Pb)-free

IRF7341

Abstract: IRF7341 application note
Contextual Info: PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V

Contextual Info: IRF7342PbF-1 HEXFET Power MOSFET VDS -55 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V S1 1 8 D1 G1 2 7 D1 3 6 D2 4 5 D2 0.105 Ω 26 nC S2 -3.4 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Contextual Info: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

em 234 stepper

Abstract: transistor smd marking cfr transistor BD 222 SMD ffs transistor smd transistor BD 140 working principle in TRANSISTOR BD 168 16 pin ic sgT6 ca6 smd transistor SMD transistor MARKING CODE 213 MOSFET TRANSISTOR SMD MARKING CODE 18A
Contextual Info: TMC260/TMC261/TMC262 DATA SHEET V. 1.10 / 2011-Mar-09 1 TMC260, TMC261, TMC262 Energy saving phase stepper interface and external power and protection high resolution microstep two driver with step and direction internal (TMC260, TMC261) or stage (TMC262) with diagnostics

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

3310S06S

Abstract: IRS20955 irs*20955s MMBT3904 SOT23-BCE IRS20955S 3310IR01 cr3225-1210 ETQA21ZA220 IRS20955SPBF PCC2239CT-ND
Contextual Info: IRAUDAMP4 120 W x 2 Channel Class D Audio Power Amplifier Using IRS20955 and IRF6645 By Johan Strydom, Jun Honda, and Jorge Cerezo Table of Contents Page Introduction . 1

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

ca6 smd transistor

Abstract: VISHAY MARKING electrolyt capacitors smd schottky diode sg1 TMC260 transistor BD 222 SMD IRF7343 bmb2 smd hint HB1 stepper motor coil termination tmc262
Contextual Info: POWER DRIVER FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC262 DATASHEET Universal, cost-effective stepper driver for two-phase bipolar motors with state-of-the-art features. External MOSFETs fit different motor sizes. With Step/Dir Interface and SPI. APPLICATIONS

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK