F8707G
Abstract: f8707 IRF8707G
Contextual Info: IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free VDSS 55V Description These HEXFET Power MOSFET’s in a Dual SO-8 package
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IRF7341GPbF
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F8707G
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f8707
Abstract: F8707G IRF8707G isd xxxx IRF8707GPBF IONAL
Contextual Info: PD - 96252A IRF7416GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free A D 1 8 S 2 7 D S 3 6 D G 4 5
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6252A
IRF7416GPbF
EIA-481
EIA-541.
f8707
F8707G
IRF8707G
isd xxxx
IRF8707GPBF
IONAL
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F8707G
Abstract: F8707
Contextual Info: PD - 96252A IRF7416GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free A D 1 8 S 2 7 D S 3 6 D 4 5 D
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Original
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6252A
IRF7416GPbF
EIA-481
EIA-541.
F8707G
F8707
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PDF
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