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F8707G Abstract: f8707 IRF8707G Contextual Info: IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free VDSS 55V Description These HEXFET Power MOSFET’s in a Dual SO-8 package	Original	irf7341gpbf d-020d f8707g f8707 +1irf8707g	PDF

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F8707G

Abstract: f8707 IRF8707G
Contextual Info: IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free VDSS 55V Description These HEXFET Power MOSFET’s in a Dual SO-8 package

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irf7341gpbf d-020d f8707g f8707 +1

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