FSX017 Search Results

FSX017 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSX017LG	Eudyna Devices	General Purpose GaAs FET	Original	PDF	77.79KB	4
FSX017LG/001	Fujitsu	GaAs FET	Original	PDF	47.05KB	4
FSX017LG/001	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017LG/001-E1	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017LG-E1	Fujitsu	FET: P Channel: ID 0.075 A	Original	PDF	77.63KB	4
FSX017WF	Fujitsu	General Purpose GaAs FET	Original	PDF	92.72KB	4
FSX017X	Fujitsu	GaAs FET & HEMT Chip	Original	PDF	82.54KB	4
FSX017X/001	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017X/001	Fujitsu	GaAs FET	Original	PDF	47.05KB	4
FSX017X/001-E1	Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017X-E1	Fujitsu	FET: P Channel: ID 0.075 A	Original	PDF	82.54KB	4

FSX017 Price and Stock

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Fuji Electric Co Ltd FSX017LG TRANSISTOR,MESFET,N-CHAN,8V V(BR)DSS,35MA I(DSS),SOT-173VAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FSX017LG		8			1 $18.00 10 $16.00 100 $16.00 1000 $16.00 10000 $16.00	Buy Now
SUMITOMO ELECTRIC Interconnect Products FSX017X GaAs FETs, Chip, X-band Amplifier, 11dB, 8GHz, 38mA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	FSX017X		6,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
FUJITSU Limited FSX017LG RF Small Signal Field-Effect Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	FSX017LG		5,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FSX017 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FSX017X Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. FCSI0598M200	PDF
FSX017LG Abstract: fujitsu gaas fet Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. FCSI0598M200 fujitsu gaas fet	PDF
FSX017WF Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. FCSI0598M200	PDF
fujitsu hemt Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. fujitsu hemt	PDF
FSX017L Abstract: S12MAG Eudyna Devices X BAND power amplifiers Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. FSX017L S12MAG Eudyna Devices X BAND power amplifiers	PDF
Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz.	PDF
FSX017X Abstract: fujitsu hemt GaAs FET HEMT Chips Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt GaAs FET HEMT Chips	PDF
fujitsu hemt Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-\|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	OCR Scan	FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt fujitsu gaas fet GaAs FET HEMT Chips	PDF
GaAs FET HEMT Chips Abstract: 12GHz 8GHz oscillator FSX017X fsx017 Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz. GaAs FET HEMT Chips 12GHz 8GHz oscillator fsx017	PDF
FLC301XP Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5	OCR Scan	FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151	PDF
EUDYNA Abstract: FSX017X/001 FSX017X Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	FSX017LG/001 FSX017X/001 FSX017/001 FSX017LG/001 RATINGS4888 EUDYNA FSX017X/001 FSX017X	PDF
FSX017X/001 Abstract: bonder Fsx017LG fujitsu gaas fet Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	FSX017LG/001 FSX017X/001 FSX017X/001 FSX017LG/001 FCSI0598M200 bonder Fsx017LG fujitsu gaas fet	PDF
FSXO17WF Abstract: FSX017WF 12QHz fujitsu gaas fet Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P-\|<jB=21-5dB Typ. @8.0GHz High Power Gain: G-\|dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	OCR Scan	FSXO17WF FSX017WF 12GHz. FCSI0598M200 FSXO17WF 12QHz fujitsu gaas fet	PDF
FSX017WF Abstract: FSX017 Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. FSX017	PDF

Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. FCSI0598M200	PDF
NF 817 Abstract: Eudyna Devices FSX017WF Eudyna Devices power amplifiers Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. NF 817 Eudyna Devices Eudyna Devices power amplifiers	PDF
Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium	Original	FSX017WF FSX017WF 12GHz. FCSI0598M200	PDF
fujitsu x band amplifiers Abstract: FSX017LG Q1150 fujitsu gaas fet Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P-\|dE3 = 16.0dBm Typ. @12.0GHz • High Power Gain: G ^ g = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	OCR Scan	FSX017L FSX017LG 12GHz. FCSI0598M200 fujitsu x band amplifiers Q1150 fujitsu gaas fet	PDF
Eudyna Devices X BAND power amplifiers Abstract: FSX017LG Eudyna Devices Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. U4888 Eudyna Devices X BAND power amplifiers Eudyna Devices	PDF
FSX017X Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	FSX017X FSX017X 12GHz.	PDF
FSX017LG Abstract: FSX017 Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	FSX017LG FSX017LG 12GHz. Uni73 FSX017	PDF
FLL105 Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202 Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ	OCR Scan	FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF
FSX017LG/001-E1 Abstract: FSX017LG Contextual Info: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175	OCR Scan	2000Q. FSX017LG/001-E1 FSX017LG	PDF

FSX017 Search Results

FSX017 Datasheets (11)

FSX017 Price and Stock

Fuji Electric Co Ltd FSX017LG

SUMITOMO ELECTRIC Interconnect Products FSX017X

FUJITSU Limited FSX017LG

FSX017 Datasheets Context Search

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GaAs FET HEMT Chips

FLC301XP

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FSXO17WF

FSX017WF

NF 817

fujitsu x band amplifiers

Eudyna Devices X BAND power amplifiers

FSX017X

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FLL105

FLC301XP

FSX017LG/001-E1