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FSX017L Datasheets (5)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSX017LG		Eudyna Devices	General Purpose GaAs FET	Original	PDF	77.79KB	4
FSX017LG/001		Fujitsu	GaAs FET	Original	PDF	47.05KB	4
FSX017LG/001		Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017LG/001-E1		Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017LG-E1		Fujitsu	FET: P Channel: ID 0.075 A	Original	PDF	77.63KB	4

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SUMITOMO ELECTRIC Industries Ltd


SUMITOMO ELECTRIC Industries Ltd FSX017LG/001 TRANSISTOR, GAAS MESFET, METAL-CERAMIC PACKAGE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FSX017LG/001		3			1 $19.50 10 $19.50 100 $19.50 1000 $19.50 10000 $19.50	Buy Now

FSX017L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FSX017LG Abstract: fujitsu gaas fet Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	fsx017lg 12ghz fcsi0598m200 fujitsu gaas fet	PDF
FSX017L Abstract: S12MAG Eudyna Devices X BAND power amplifiers Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	fsx017lg 12ghz fsx017l s12mag +1eudyna devices x band power amplifiers	PDF
EUDYNA Abstract: FSX017X/001 FSX017X Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	fsx017lg/001 fsx017x/001 fsx017/001 ratings4888 +2eudyna fsx017x	PDF
FSX017X/001 Abstract: bonder Fsx017LG fujitsu gaas fet Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	fsx017lg/001 fsx017x/001 fcsi0598m200 bonder +2fsx017lg fujitsu gaas fet	PDF
Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	fsx017lg 12ghz fcsi0598m200	PDF
fujitsu x band amplifiers Abstract: FSX017LG Q1150 fujitsu gaas fet Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P-\|dE3 = 16.0dBm Typ. @12.0GHz • High Power Gain: G ^ g = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	OCR Scan	fsx017l fsx017lg 12ghz fcsi0598m200 +3fujitsu x band amplifiers q1150 fujitsu gaas fet	PDF
Eudyna Devices X BAND power amplifiers Abstract: FSX017LG Eudyna Devices Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	fsx017lg 12ghz u4888 eudyna devices x band power amplifiers +1eudyna devices	PDF
FSX017LG Abstract: FSX017 Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION	Original	fsx017lg 12ghz uni73 fsx017	PDF
FSX017LG/001-E1 Abstract: FSX017LG Contextual Info: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175	OCR Scan	2000q fsx017lg/001-e1 fsx017lg	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	fmc141401-02 fujitsu gaas marking code fujitsu k022 fll300-2 +6fll55 fsx52wf fujitsu l101 fujitsu x51 fll200-2 fll300-1	PDF
FSX52WF Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG Contextual Info: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5	OCR Scan	fhc40lg fhx13lg fhx14lg fhx04lg +8fhx05lg fhx06lg fhx35lg fhr02fh fsx52wf gaas hemts x band fsx017lg fsu01lg	PDF