BONDER Search Results

Contextual Info: INDEX 963C CONNECTOR BONDER, 963-C CONNECTORS, 8 4 963C MECHANICAL ASSEMBLY FIXTURE, 963G COMB, 7 7 963L CONNECTOR BONDER, 963L CONNECTORS, 5 963R CONNECTORS, 6 8 A ACCESSORIES, 49, 54, 59, 76, 79, 81, 83 FEATURES, 49, 54, 76, 79, 81,83 ORDERING INFORMATION, 53, 58, 78, 80, 82, 84

7416a

Abstract: chip bonding die DIE BONDER
Contextual Info: HSXAWAVS Power FET Chip Handling Instruction Hexawave, Inc. Die Bonding Procedure Equipments and Tools 1. Die Bonder 2. Tweezers Type SS 3. Thermometer Procedure I. Perform all steps in a forcing N2gas environment. 2 Control the heated stage temperature within 310

Contextual Info: TOSHIBA M ICRO W A VE POWER M ICRO W AVE SEM ICO NDUCTO R JS8850A-AS TECHNICAL DATA F E AT URES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTA TIO N CH IP FORM H IG H PO W ER p1dB = 2 1 5 d B m a t f = 15 G H z H IG H G AIN G^dB = 9 -0 dB at f = 15 GHz

KU 607 VB

Abstract: la 1404 TE 1539
Contextual Info: T O S H IB A T7988,JT7988Y-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7988, JT7988Y-AS T7988, JT7988Y-AS CMOS 1 CHIP LSI FOR LCD ELECTRONIC CALCULATOR The T7988, JT7988Y-AS is a 1 chip microcomputer for 10digits + 2-digits electronic scientific calculator.

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

MINDSPEED M02015

Contextual Info: Revision Information This document contains information that is subject to change without notice. Contact Technical Publications for latest revision information. M02015 Low Power CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XU1009-BD

Abstract: RF Transistor Selection 26TX0555 26TX
Contextual Info: 18.0-36.0 GHz GaAs MMIC Transmitter July 2007 - Rev 27-Jul-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain

INCOMING RAW MATERIAL INSPECTION chart

Abstract: INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method INCOMING RAW MATERIAL flowchart LINEAR TECHNOLOGY mark code INCOMING MATERIAL FLOW PROCESS INCOMING RAW MATERIAL aql incoming inspection mil-std-883 2015 Gold Ball Bond Shear
Contextual Info: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology BIPOLAR PROCESS TO-92 Linear Technology Carsem Maylasia Linear Technology

dyna image

Abstract: cisco 2901 Vishay quality iso certificate 2901 cisco power supply cisco 891 smd 504 diod "dyna image" melf 777 ISO 9001 Sony oracle
Contextual Info: United States SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K [ X ] ANNUAL REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 [FEE REQUIRED] For the fiscal year ended December 31, 2000. Or [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF

microwave MARCONI

Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm

Contextual Info: PRELIMINARY INFORMATION CHA6009 5. 0 - 6 . 0 G H z P O W E R A M P L I F I E R G a A s M O N O L I T H I C M I C R O W A V E 1C FEATURES • • • • 4W output power at 3dB gain compression 2.5W output power at 1dB gain compression 19dB small signal gain

INCOMING RAW MATERIAL INSPECTION

Abstract: INCOMING RAW MATERIAL INSPECTION method INCOMING Plate INSPECTION INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL flowchart INCOMING RAW MATERIAL LINEAR TECHNOLOGY mark code inspection sampling plan INCOMING RAW MATERIAL INSPECTION chart mil-std-883 2015 Gold Ball Bond Shear
Contextual Info: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology Corporation Bipolar Process 3 Lead SOT-223 Linear Technology Corp., Milpitas,

H40P

Abstract: NN12 P35-5135-000-200
Contextual Info: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

MARCONI amplifier

Abstract: 84-1LMI NN12 P35-5112-000-200
Contextual Info: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.

TRANSISTOR R1002

Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing

ultrasonic probe ge

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Contextual Info: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes

Contextual Info: EBAlpha GaAs Flip Chip Mixer Diodes DM K2790-000, DMK2308-000 Features S ing le • Designed for High Volume Designs PC ■ High Frequency 2 0 -1 0 0 G Hz Nl m ■ Exceeds Environmental Requirements for M IC & Hybrid Applications A nti-P arallel ■ Designed for Low Junction Capacitance

mcz 300 1bd

Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
Contextual Info: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION

84-1LMI

Abstract: NN12 P35-5112-000-200
Contextual Info: Data sheet HEMT MMIC LNA 8.5 – 10.5GHz Features • 19dB Gain Typical • 1dB Noise Figure The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.

6OSC0460

Abstract: DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1
Contextual Info: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

DM6030HK

Abstract: CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy
Contextual Info: 2.0-20.0 GHz GaAs MMIC 1W Power Amplifier October 2006 - Rev 13-Oct-06 CMM0016 Features Chip Diagram Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

30SPA0553

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing