FLX252XV Search Results

FUJITSU XBAND

Contextual Info: FLX252XV rUJIIoU GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLX252XV chip is a pow er GaAs FET that is designed for general purpose applications in the X-Band

FLC301XP

Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5

Contextual Info: FLX252XV ü a A s F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions IDSS 1000 1500 mA - 600 - mS -1.0 -2.0 -3.5 V -5 - - V 32.5 33.5 - dBm 6.5 7.5 - dB V q s = 5V, Id s = 600mA

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

FLC301XP

Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Contextual Info: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X