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FSX017X Datasheets (5)

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Fujitsu

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSX017X		Fujitsu	GaAs FET & HEMT Chip	Original	PDF	82.54KB	4
FSX017X/001		Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017X/001		Fujitsu	GaAs FET	Original	PDF	47.05KB	4
FSX017X/001-E1		Fujitsu	FET Transistor: Packaged GaAs FET	Original	PDF	80.46KB	4
FSX017X-E1		Fujitsu	FET: P Channel: ID 0.075 A	Original	PDF	82.54KB	4

FSX017X Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FSX017X Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	fsx017x 12ghz fcsi0598m200	PDF
fujitsu hemt Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	fsx017x 12ghz fujitsu hemt	PDF
FSX017X Abstract: fujitsu hemt GaAs FET HEMT Chips Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	fsx017x 12ghz fcsi0598m200 fujitsu hemt +1gaas fet hemt chips	PDF
fujitsu hemt Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-\|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	OCR Scan	fsx017x 12ghz fcsi0598m200 fujitsu hemt +2fujitsu gaas fet gaas fet hemt chips	PDF
GaAs FET HEMT Chips Abstract: 12GHz 8GHz oscillator FSX017X fsx017 Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	fsx017x 12ghz gaas fet hemt chips 8ghz oscillator +1fsx017	PDF
FLC301XP Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5	OCR Scan	fhx04x fhx05x fhx06x fhx13x +11fhx14x fhx35x fhx45x fhr02x fhr20x fsx017x flc301xp flr016xp fsx51x flc151xp flc151	PDF
EUDYNA Abstract: FSX017X/001 FSX017X Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	fsx017lg/001 fsx017x/001 fsx017/001 ratings4888 +2eudyna fsx017x	PDF
FSX017X/001 Abstract: bonder Fsx017LG fujitsu gaas fet Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high	Original	fsx017lg/001 fsx017x/001 fcsi0598m200 bonder +2fsx017lg fujitsu gaas fet	PDF
Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	fsx017x 12ghz	PDF
FSX017X Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic	Original	fsx017x 12ghz	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	flc301xp flc301xp equivalent flk052xp fujitsu gaas fet application note +6iss1b1 cs98e1v6r800-k41d cs98e1v6r000-k41b fujitsu "application notes fjs-ds-158 fll171	PDF
FLC301XP Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151 Contextual Info: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X	OCR Scan	flc081xp flc151xp flc301xp fsx017x +12fsx51x fsx52x flx252xv flk012xp flk022xv flk052xv fsx52 fujitsu microwave xp 215 flk202 fsx51 flc151	PDF