FHX45X Search Results

FHX45X Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FHX45X		Fujitsu	GaAs FET & HEMT Chip	Original	PDF	58.8KB	4

FHX45X Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
eudyna GaAs FET RF Transistor Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz eudyna GaAs FET RF Transistor high frequency transistor ga as fet transistor on 4959 eudyna fet	PDF
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz	PDF
FHX45X Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt	PDF
FLC301XP Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5	OCR Scan	FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151	PDF
Contextual Info: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15\|iim, Wg = 280\|iim • Gold Gate Metallization for High Reliability	OCR Scan	FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200	PDF
FHX45X Abstract: GaAs FET HEMT Chips GaAs FET chip Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz GaAs FET HEMT Chips GaAs FET chip	PDF
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200	PDF
fujitsu hemt Abstract: TM 1628 FHX45X high power FET transistor s-parameters GaAs FET HEMT Chips Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 fujitsu hemt TM 1628 high power FET transistor s-parameters GaAs FET HEMT Chips	PDF
CQ 828 Contextual Info: FHX45X GaAs F E I and H E M T Chips ELECTRICAL CHARACTERISTICS Ambien Temperature Ta=25° C Item Symbol Saturated Drain Current Condition ID SS Min. Limit Typ. Max. Unit VDS = 2V, V q s =0V 10 40 85 mA = 2v , id s =io v 45 65 - mS Transconductance gm vds	OCR Scan	FHX45X 12GHz 10pcs. CQ 828	PDF
FHX34X Abstract: FHX13x Contextual Info: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10	OCR Scan	FHX04X FHX06X FHX13X FHX14X FHX34X FHX35X FHX45X FHR02X FHR20X	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L	PDF