FHX45X Search Results
FHX45X Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FHX45X | Fujitsu | GaAs FET & HEMT Chip | Original | 58.8KB | 4 |
FHX45X Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
eudyna GaAs FET RF Transistor
Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
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fhx45x12ghz2-18ghzeudyna gaas fet rf transistor+3 | |
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Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor |
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fhx45x12ghz2-18ghz | |
FHX45X
Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
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fhx45x12ghz2-18ghzhigh power fet transistor s-parameters+3 | |
FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
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OCR Scan |
fhx04xfhx05xfhx06xfhx13x+11 | |
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Contextual Info: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability |
OCR Scan |
fhx45x12ghz2-18ghzfcsi0598m200 | |
FHX45X
Abstract: GaAs FET HEMT Chips GaAs FET chip
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fhx45x12ghz2-18ghzgaas fet hemt chips+1 | |
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Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor |
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fhx45x12ghz2-18ghzfcsi0598m200 | |
fujitsu hemt
Abstract: TM 1628 FHX45X high power FET transistor s-parameters GaAs FET HEMT Chips
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fhx45x12ghz2-18ghzfcsi0598m200+4 | |
CQ 828Contextual Info: FHX45X GaAs F E I and H E M T Chips ELECTRICAL CHARACTERISTICS Ambien Temperature Ta=25° C Item Symbol Saturated Drain Current Condition ID SS Min. Limit Typ. Max. Unit VDS = 2V, V q s =0V 10 40 85 mA = 2v , id s =io v 45 65 - mS Transconductance gm vds |
OCR Scan |
fhx45x12ghz10pcscq 828 | |
FHX34X
Abstract: FHX13x
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OCR Scan |
fhx04xfhx06xfhx13xfhx14x+5 | |
FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
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flc301xpflc301xp equivalentflk052xpfujitsu gaas fet application note+6 | |
MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
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2sa19772sa19782sc23512sc3355+16 |