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FHX35X Datasheets (7)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FHX35X		Fujitsu	FET, P Channel, ID 0.085 A	Original	PDF	58.81KB	4
FHX35X		Fujitsu	Low Noise HEMT	Original	PDF	157.54KB	4
FHX35X		Unknown	FET Data Book	Scan	PDF	103.49KB	2
FHX35X002		Eudyna Devices	TRANS JFET 6V 4LG	Original	PDF	76.54KB	4
FHX35X/002		Fujitsu	Low Noise HEMT	Original	PDF	157.54KB	4
FHX35X/002-E1		Fujitsu	FET: P Channel: ID 0.085 A	Original	PDF	157.54KB	4
FHX35X-E1		Fujitsu	FET: P Channel: ID 0.085 A	Original	PDF	58.81KB	4

FHX35X Price and Stock

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Others FHX35X INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	FHX35X		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SUMITOMO ELECTRIC Interconnect Products FHX35X Trans RF MOSFET 2V Chip
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	FHX35X		8,201			1 - 10 $32.50 100 $32.50 1000 $32.50 10000 $32.50	Buy Now

FHX35X Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	fhx35x 12ghz 2-18ghz	PDF
high frequency transistor ga as fet Abstract: GaAs FET HEMT Chips fujitsu hemt Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	fhx35x 12ghz 2-18ghz fcsi0598m200 +3high frequency transistor ga as fet gaas fet hemt chips fujitsu hemt	PDF
FHX35 Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.	Original	fhx35x/002 fhx35lg/002 co4888 fhx35 +4eudyna fhx35lg hemt low noise die fujitsu gaas fet	PDF
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25\|iim, W g = 280\|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended	OCR Scan	fhx35x 2-18g fcsi0598m200	PDF
FLC081XP Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A	OCR Scan	fhx05x fhx06fa/lg fhx06x fhx15faag +14fhx35lg 27dbin flc253mh-8 flc301mg-8 flc311mg-4 flk012wf flc081xp flc253mh-6 flc091wf flc053wg flc103wg flk022wg flk052wg fhx15fa	PDF