FLL55
Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.
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flu10xmflu17xmflu35xmfll101me+11fll171mefll351mefll55mkfll120mkfll200ib-1fll200ib-2fll55flc253mh-6fll300ip-2flu10fll171
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1N22b
Abstract: 1N22B2 1n22b3 1N2448 1N376B 1N2447 1N2457
Contextual Info: SE HI CON C O M P O N E N T S INC EflE D • fll35157 CI000A37 E STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS '*v s< ; type m m ¿m m yovm - V m ITEM* m AMPERES v v -" '■ AMPS n x m 7 : AMPS 1N2136 1N2136A 1N2137 1N2137A 1N2138 450 450 500 500
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a13s1s70d0fl371n21361n2136a+131n21371n2137a1n21381n2138a1n21541n21551n22b1n22b21n22b31n24481n376b1n24471n2457
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fll351
Abstract: fujitsu gaas fet L-band FLL351ME
Contextual Info: FLL351ME F IIÏÏtÇ II J L-Band Medium & High Power GaAs F ET s FEATURES • • • • • High Output Power: P-|c|g=35.5dBm Typ. High Gain: G-|^13=11 -5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL351 ME is a Power GaAs FET that is specifically designed to
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FLL351ME
Abstract: fll351 fujitsu databook l-band power fets microwave databook
Contextual Info: FLL351ME P I L-Band Medium & High Power GaAs FETs i î ? j r ï i FEATURES • • • • • High Output Power: P1c|B=35.5dBnn Typ.) High Gain: G-|C|b =11 -5clB (Typ) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION
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15KW
Abstract: S704-15K36 SPIP120 SPIP208 SPIP24 SPIP250 SPIP30 SPIP440 SPIP500 SPIP60
Contextual Info: SEMICON COMPONENTS INC 5fiE D • fll351S7 Q0D0fll3 T ■ DESCRIPTION SPIP CASE This series is designed for industrial applications such as across the line AC protection, in supervisory control systems, CATV, telecommunications, and computers. These Silicon PN Junction devices have been designed to absorb high voltage transients
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spip250spip440spip500s704-15k36+915k36t100ns100ys15kwspip120spip208spip24spip30spip60
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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FLL101ME
Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
Contextual Info: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)
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sues2606
Abstract: SUES805 SUES706 SUES802 70t03 SUES806 SUES2605 70to3 SUES704 1N5812
Contextual Info: SEN I CO N C O M P O N E N T S INC 5 1 3 5 1 5 7 ODOGfiM t =1 • 2flE D ' T - o 3 ' >i RECOVERYRECTIFIERS -/r I lf IGSEALEtí AMDitell^K Y FEATURES: • 15 Amp to 70 Amp • 50V to 800 V • 35 ns to 70 ns • High Temperature Operation • Metallurgical^ Bonded
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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flc301xpflc301xp equivalentflk052xpfujitsu gaas fet application note+6iss1b1cs98e1v6r800-k41dcs98e1v6r000-k41bfujitsu "application notesfjs-ds-158fll171
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FLL351ME
Contextual Info: FL U 5 IME L-Bcind Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 15 mW Storage Temperature Tstg
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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