AuSn solder
Abstract: fsx51x die-attach FSX51 AuSn
Contextual Info: GaAs FET FHX35X/002 FSX51X/011 BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and per sonnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment.
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FHX35X/002
FSX51X/011
FHX35X/002,
FSX51X/011.
AuSn solder
fsx51x
die-attach
FSX51
AuSn
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FSX51
Abstract: FSX51X
Contextual Info: FSX51X/011 FSX51LG/001 DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs MESFETs suitable fo r use as the FET fro n t end o f an optical receiver in high speed lightwave com m unication systems. This N-channel 1.0 micron speed Schottky-Barrier gate FET combines high transconductance, low gate
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FSX51X/01!
FSX51LG/001
FSX51X/011
FSX51LG/001
FSX51X/011
FSX51
LG/001
FSX51X
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fsx51x
Contextual Info: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage
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FSX51X
fsx51x
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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FSX51
Abstract: fujitsu gaas fet fsx51x S3V 05 S3V 03
Contextual Info: FSX51X/011 FSX51LG/001 G aAs FET FEATURES • • • • • High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability APPLICATIONS The front end of an optical receiver in high speed application. DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs
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FSX51X/011
FSX51LG/001
FSX51
LG/001
FSX51LG/00J
51X/01
fujitsu gaas fet
fsx51x
S3V 05
S3V 03
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FSC11LF
Abstract: FSX52WF FSC10LF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021
Contextual Info: - 140 - :1 f m g FSCIOLF it S ± ii FSCIOX FSC11FA/LG Ä ±ü§ ffl € fr & m ¡s 4 % 1 V* K V * fg "Æ Vg s * X * * (V) 1* (A) % m [ P d /P c h (max) * * m (A) Vg s (V) tt n (Ta=25'C) V g s (c ff) (min) (max) Vd s (V) (V) (V) I ds s (min) (max) V d s
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FSC10LF
250ii
FSC10X
FSC11FA/LG
FSC11LF
95nstyp
FT6021
FT6021D
160nstyp
FSX52WF
FT6022D
FSX51WF
FT6012D
FT6110D
FT6046
FT6021D
ft6021
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fujitsu gaas fet
Abstract: S3V 03 S3V 05 FSX51 FHX35 fsx51x
Contextual Info: LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m mS •g s o Cgs CGD (nA) (PF) (PF) Part Number Notes V d S=3V VDS=3V lDS=10mA V d S=3V lDS=20mA V q S=-2V FHX35 LG/002 60 (V d S=2V) 10 0.47 0.035 Packaged HEMT FHX35X/002
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FHX35
LG/002
FHX35X/002
FSX51
LG/001
FSX51X/011
fujitsu gaas fet
S3V 03
S3V 05
fsx51x
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KS D 9502
Abstract: FMM381CG FMM360 fmm362 fsx51x
Contextual Info: LIGHTWAVE CO M PO N E N TS & MODULES “CG” PACKAGE PIN DESCRIPTION FMM311CG # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SYMBOL VSS DIN GND GND GND VSS T GND GND GND Mm k Mm k vss GND GND OUT GND V|B vss vss V|p vss vss VREF FUNCTION
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FMM311CG
068nF
FMM381CG
KS D 9502
FMM381CG
FMM360
fmm362
fsx51x
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Contextual Info: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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FLC081XP
FLC151XP
FLC301XP
FSX017X
FSX51X
FSX52X
FLX252XV
FLK012XP
FLK022XV*
FLK052XV
FLC301XP
fsx52
FUJITSU MICROWAVE
XP 215
FLK202
FSX51
FLC151
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