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    FSX51 Search Results

    FSX51 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FSX51WF
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 50.76KB 1
    FSX51WF
    Unknown FET Data Book Scan PDF 102.96KB 2
    FSX51X
    Unknown FET Data Book Scan PDF 102.96KB 2

    FSX51 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FSX51WF

    Abstract: FSX51
    Contextual Info: FSX51WF General Purpose GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage Vg S -5 V Total Power Dissipation Ptot 1 .0 w Storage Temperature T stg -65 t o +175


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    fsx51wf2000qis21i2fsx51 PDF

    AuSn solder

    Abstract: fsx51x die-attach FSX51 AuSn
    Contextual Info: GaAs FET FHX35X/002 FSX51X/011 BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and per­ sonnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment.


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    fhx35x/002fsx51x/011ausn solderfsx51x+3die-attachfsx51ausn PDF

    FSX51

    Abstract: FSX51X
    Contextual Info: FSX51X/011 FSX51LG/001 DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs MESFETs suitable fo r use as the FET fro n t end o f an optical receiver in high speed lightwave com m unication systems. This N-channel 1.0 micron speed Schottky-Barrier gate FET combines high transconductance, low gate


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    fsx51x/01fsx51lg/001fsx51x/011fsx51+2lg/001fsx51x PDF

    fsx51x

    Contextual Info: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage


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    fsx51x PDF

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


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    FSX51

    Abstract: fujitsu gaas fet fsx51x S3V 05 S3V 03
    Contextual Info: FSX51X/011 FSX51LG/001 G aAs FET FEATURES • • • • • High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability APPLICATIONS The front end of an optical receiver in high speed application. DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs


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    fsx51x/011fsx51lg/001fsx51lg/001+6fsx51lg/00j51x/01fujitsu gaas fetfsx51xs3v 05s3v 03 PDF

    FSC11LF

    Abstract: FSX52WF FSC10LF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021
    Contextual Info: - 140 - :1 f m g FSCIOLF it S ± ii FSCIOX FSC11FA/LG Ä ±ü§ ffl € fr & m ¡s 4 % 1 V* K V * fg "Æ Vg s * X * * (V) 1* (A) % m [ P d /P c h (max) * * m (A) Vg s (V) tt n (Ta=25'C) V g s (c ff) (min) (max) Vd s (V) (V) (V) I ds s (min) (max) V d s


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    fujitsu gaas fet

    Abstract: S3V 03 S3V 05 FSX51 FHX35 fsx51x
    Contextual Info: LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m mS •g s o Cgs CGD (nA) (PF) (PF) Part Number Notes V d S=3V VDS=3V lDS=10mA V d S=3V lDS=20mA V q S=-2V FHX35 LG/002 60 (V d S=2V) 10 0.47 0.035 Packaged HEMT FHX35X/002


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    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


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    KS D 9502

    Abstract: FMM381CG FMM360 fmm362 fsx51x
    Contextual Info: LIGHTWAVE CO M PO N E N TS & MODULES “CG” PACKAGE PIN DESCRIPTION FMM311CG # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SYMBOL VSS DIN GND GND GND VSS T GND GND GND Mm k Mm k vss GND GND OUT GND V|B vss vss V|p vss vss VREF FUNCTION


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    fmm311cg068nffmm381cgks d 9502+3fmm360fmm362fsx51x PDF

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


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    flc301xpflc301xp equivalentflk052xpfujitsu gaas fet application note+6iss1b1cs98e1v6r800-k41dcs98e1v6r000-k41bfujitsu "application notesfjs-ds-158fll171 PDF

    EVAL-AD1896EB

    Abstract: AD1896 74hc04 oscillator 8 Mhz toslink 5.1 sc937-02 RJ16 circuits spdif to rca converter RJ18 HDR3 AD1852
    Contextual Info: a AD1896 7.75:1 to 1:8, 192 kHz Stereo ASRC Evaluation Board EVAL-AD1896EB OVERVIEW INTEGRATED CIRCUIT FUNCTIONS The AD1896 is a 24-bit, high-performance, single-chip, second generation Asynchronous Sample Rate Converter ASRC . The AD1896 supports sample rates up to 192 kHz with 7.75:1


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    ad1896eval-ad1896eb24-bitc02625+874hc04 oscillator 8 mhztoslink 5.1sc937-02rj16circuits spdif to rca converterrj18hdr3ad1852 PDF

    FLC301XP

    Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
    Contextual Info: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X


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    sc937-02

    Abstract: spdif receiver ic 74HC153 pin configuration AD1895 AD1896 toslink OPTICAL RECEIVING JACK smd resistor 1c0 SPDIF IC CS8414 CS8414 5.1 audio
    Contextual Info: a OVERVIEW The AD1895 is an all-digital Asynchronous Sample Rate Converter ASRC used in audio applications. This ASRC supports sample rates up to 192 kHz with 7.75:1 downsampling and 1:8 upsampling ranges while maintaining the highest performance. In normal operation, a digital signal in


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    ad1895c02624sc937-02spdif receiver+7ic 74hc153 pin configurationad1896toslink optical receiving jacksmd resistor 1c0spdif iccs8414cs8414 5.1 audio PDF

    fld3c2pj

    Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
    Contextual Info: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o


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    FSX52WF

    Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
    Contextual Info: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5


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    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


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