FHR02X Search Results

Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @ f=18G Hz High Associated Gain: 9.0dB (Typ.)@ f=18G Hz Lg s 0.25|iim, W g = 200|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX02X is a High Electron M obility Transistor(HEM T)

FHR02X

Abstract: FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

Contextual Info: FHR02X GaAs F ET and H E M T Chips ELECTRICAL CH A R A C TER IS ECS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions IDSS Min. Limit Typ. Max. Unit VDS = 2V, V q s = 0V 15 30 60 mA T ransconductance 9m VDS = 2V, Id s = 10mA

transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

FHX02X

Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

FLC301XP

Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5

GaAs FET HEMT Chips

Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

high power FET transistor s-parameters

Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

FHX04FA

Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
Contextual Info: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop

FHX34X

Abstract: FHX13x
Contextual Info: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi