cs 2648
Abstract: FLR106XV
Contextual Info: FLR 106X V fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • High Output Power: P-|dB = 29.0dBm Typ. • High Gain: G ^ b = 7.0dB(Typ.) • High PAE: riadd = 28%(Typ.) • Proven Reliability DESCRIPTION The FLR106XV chip is a power GaAs FET that is designed
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FLR106-XV
Contextual Info: FLR106XV G a À s F E T a n d H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Saturated Drain Current Symbol IDSS Test Conditions 480 720 mA - 200 - mS -1.0 -2.0 -3.5 V -4 - - V 28 29 - dBm 6.0 7.0 dB - 28 % - - Vos - 3V, IQS = 250mA
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FLR106XV
Abstract: FLR106-XV fujitsu gaas fet k-band
Contextual Info: FLR106XV Füjrrsu GaAs FET and HEMT Chips FEATURES • High Output Power: P-|<jB = 29.0dBm Typ. • High Gain: G ^ b = 7.0dB(Typ.) • High PAE: riadd = 28%(Typ.) • Proven Reliability DESCRIPTION The FLR106XV chip is a power GaAs FET that is designed for general purpose applications in the K-Band frequency
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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flc301xpflc301xp equivalentflk052xpfujitsu gaas fet application note+6iss1b1cs98e1v6r800-k41dcs98e1v6r000-k41bfujitsu "application notesfjs-ds-158fll171
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Contextual Info: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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