FPD2250SOT89
Abstract: FPD2250
Contextual Info: Balanced EBD2250SOT89-AA FPD2250SOT89 1.85GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 1.7 1.85 31.4 31.2 15.2 14.8 0.9 0.9 43.0 44.0 5V, 150mA DESCRIPTION AND APPLICATIONS The data given above is based on measurements taken on the evaluation board described
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9421
Abstract: FPD2250SOT89
Contextual Info: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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FPD2250
Abstract: FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 Filtronic Components
Contextual Info: FPD2250SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 14 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD2250SOT89E
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
Contextual Info: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant
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pseudomorphic HEMT
Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
Contextual Info: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes
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FPD2250DFN
Abstract: FPD2250SOT89 MIL-HDBK-263
Contextual Info: FPD2250DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 16.5 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
Contextual Info: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency
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41dBm
Abstract: FPD2250SOT89
Contextual Info: EB2250SOT89BC FPD2250SOT89 2.0GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 2.0GHz 29dBm Output Power 13dB Gain 41dBm IP3 Noise Figure 1.5dB Bias 5V, 50% Idss DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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FPD2250
Abstract: MIL-HDBK-263 P100
Contextual Info: FPD2250 1.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 32 dBm Linear Output Power at 12 GHz ♦ 7.5 dB Power Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE (µm): 680 x 470 DIE THICKNESS: 75 µm
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pseudomorphic HEMT
Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
Contextual Info: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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2.4GHz amplifier schematic
Abstract: 2.4GHz amplifier layout FPD2250 transistor 2.4GHz amplifier schematic FPD2250SOT89
Contextual Info: EB2250SOT89BE FPD2250SOT89 2.4GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.2 2.4 30.0 30.0 11.5 11.0 1.2 1.5 41.0 41.0 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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eb2250sot89befpd2250sot89300ma2250m+530mil2.4ghz amplifier schematic2.4ghz amplifier layoutfpd2250transistor 2.4ghz amplifier schematic
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
Contextual Info: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency
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FPD2250
Abstract: PAD130
Contextual Info: FPD2250 Datasheet v3.0 1.5W POWER PHEMT LAYOUT: FEATURES: • • • • 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High
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FPD2250SOT89
Abstract: FPD2250
Contextual Info: EB2250SOT89BA FPD2250SOT89 1.85GHz EVALUATION BOARD FEATURES Measured Noise Figure 1.00 0.80 N.F. dB • • ¥ ¥ ¥ Measured @ 1.85GHz 29dBm Output Power 14.5dB Gain 42dBm OIP3 Noise Figure 0.7dB Bias 5V, 300mA 0.60 0.40 0.20 N.F.1 (dB) 0.00 N.F.2(dB)
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD2250
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 FPD1500SOT89 FPD2250SOT89 Filtronic Compound Semiconductors FPD2250SOT
Contextual Info: FPD2250SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • Datasheet v2.3 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant
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Bluetooth Energy Meter ckt diagram
Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11
Contextual Info: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3
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fd501fd504fd502fd503+10bluetooth energy meter ckt diagram94vo r29batteries varta 500 rst 124touch pad synapticsrealistic sa-150rotary encoder ec11vt82c694xub133x01alc200humidity temperature sensor sh11
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via vt8237 user manual
Abstract: VIA vt8237 FWH32 VT8237 K8N800 L570J schematic diagram lcd tv tuner box H22-J22 AMD Athlon 64 X2 vdd gnd VT1631l
Contextual Info: Preface LCD Computer L570J Series Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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VT1634AL
Abstract: tf041-th-pcb via vt1634al PCT303W PCT303A ad7 l59 16pin soic MITAC schematic 39-XI amilo schematic W83L950
Contextual Info: SERVICE MANUAL FOR 8650 BY: Sanny.Gao Repair Technology Research Department /EDVD November. 2005/R01 8650 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 4 1.1 Introduction …………………………………………………………………………………………………………… 4
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CP2211
Abstract: VT1634 ac14g mitac 8 W83L950 LM358 K8N800 h55 MOTHERBOARD CIRCUIT diagram ICS952007 cb-1410
Contextual Info: SERVICE MANUAL FOR 8889 BY: Star Meng Repair Technology Research Department /EDVD Nov.2004 8889 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ………………………………………………………………………………………………………………. 4
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via vt8235 user manual
Abstract: via vt8235 SC1486ITS D410J z0607 vt1631 RSS090 C158D158 Preface Notebook Computer C955
Contextual Info: Preface Notebook Computer D400J/D410J Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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SB315
Abstract: gd2 ec16 BC327 C327 DVD remote controL HDT SCD22U vt8237 16-2-2C STM-M50FW040 24C256 foxconn
Contextual Info: A B C D Gannet Block Diagram 3 CLK GEN AMD CPU 11,12,13 UNBUFFERED DDR SODIMM Athlon 64 4 11,12,13 UNBUFFERED DDR SODIMM 31 1394 Conn 32 RICOH R5C554 Power Switch 5532V PCMCIA 2 SLOTS Support TypeIII 8,9,10 VGA VIA 2* Slot Cardbus + 2* 1394 Ports K8T800 AGTL+ CPU I/F
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C2P1
Abstract: foxconn VT1617A VT1617 VIA vt8237 DY-SE220U2VDM-6 WISTRON power sequence HP connectors Wistron Corporation Wistron Corporation Egret
Contextual Info: A B C D E EGRET Block Diagram 200-PIN DDR SODIMM CLK GEN ICS ICS950405 4 AMD CPU DDR 3 33/400 DDR x2 Claw Hammer K8 PCB Layer Stackup 8,9,10 3 L1: Signal 1 L2: GND L3: Signal 2 L4: Signal 3 L5: VCC L6: Signal 4 4,5,6,7 TV Encoder VIA VT1623M HyperTransport
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ps4 schematic
Abstract: 820 B10 45g D5036 c945 TRANSISTOR equivalent D74 DIODE zener diode c531 c337 transistor nec equivalent smd transistor A7p vt1631 vt8235
Contextual Info: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS4 2. PCI & IRQ & DMA Description : Version : 0.6 3. Block Diagram : D C 4. Nat name Description :
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