DIN 6784 C1 Search Results

Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package BCR141/F/L3

marking WSs

Contextual Info: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package BCR169/F/L3

DIN 6784 c1

Abstract: E6327 BCR148W
Contextual Info: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2=47 kΩ • BCR148S / U: Two internally isolated transistors with good matching in one multichip package

marking WHS sot23

Abstract: transistor marking code whs
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3

marking code TS

Contextual Info: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

DIN 6784 c1

Contextual Info: BCR523U NPN Silicon Digital Transistor Array 5
Switching circuit, inverter, interface circuit, 4 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package 3 2
Built in bias resistor (R1=1k, R2 =10k) 1 C1 B2 E2

DIN 16901 150

Abstract: 15336029
Contextual Info: 12 I - y - _3_ 10 Benennung Title Pos. A-A 90° ia ,i 11.21 (3D 5,9 0.1 (D 2 3 I I ID-No. Flachstehhülsenqehäuse 3 pol. Receptacle housing 3 way Flachstehhülsenqehäuse 3 pol. Receptacle housing 3 way Verriegelungskappe 3 pol. Secondary lock 3 way

Contextual Info: BC817U NPN Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

marking 1ks

Abstract: BCV61
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

transistor marking T2

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

Contextual Info: BC846S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5

Contextual Info: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5

MARKING 3cs

Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

Contextual Info: BC856S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

Contextual Info: BCM846S 4 NPN Silicon AF Transistor Array 5 6
Precision matched transistor pair: IC  10%
For current mirror applications
Low collector-emitter saturation voltage 2
Two galvanic internal isolated Transistors 1
Complementary type: BCM856S C1 B2

4142N

Abstract: GPS05560 VPS05163
Contextual Info: BTS 4142N Target data sheet Smart High-Side Power Switch 1 Channels: 1 x 200m
Features Product Summary
Short circuit protection Overvoltage protection Vbb AZ
Current limitation Operating voltage Vbb(on)
Overload protection On-state resistance RON 47

4141N

Abstract: GPS05560 VPS05163
Contextual Info: BTS 4141N Target data sheet Smart High-Side Power Switch 1 Channels: 1 x 200m
Features Product Summary
Short circuit protection Overvoltage protection Vbb AZ
Current limitation Operating voltage Vbb(on)
Overload protection On-state resistance RON 47

smd TRANSISTOR code marking 013

Abstract: TRANSISTOR SMD MARKING CODE 207 marking code C3 SMD Transistor NF marking TRANSISTOR SMD c4 MMIC SOT 143 marking CODE 77 GPS05559 Q68000-A8370 P-SOT143-4-1 smd marking code vd P-SOT-143-4-1
Contextual Info: GaAs MMIC CGY 50 Data Sheet • Single-stage monolithic microwave IC MMIC-amplifier • Cascadable 50 Ω gain block • Application range: 100 MHz to 3 GHz • IP3 30 dBm typ. @ 1.8 GHz • Gain 8.5 dB typ. @ 1.8 GHz • Low noise figure: 3.0 dB typ @ 1.8 GHz

MARKING SOT-143 C5

Abstract: Q68000-A8370 marking code C5 SMD ic inductor 1 mH MMIC SOT 143 marking CODE 77 transistor smd marking code c3
Contextual Info: GaAs MMIC CGY 50 Data Sheet • Single-stage monolithic microwave IC MMIC-amplifier • Cascadable 50 Ω gain block • Application range: 100 MHz to 3 GHz • IP3 30 dBm typ. @ 1.8 GHz • Gain 8.5 dB typ. @ 1.8 GHz • Low noise figure: 3.0 dB typ @ 1.8 GHz

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

smd marking VB

Abstract: SMD MARKING RFC
Contextual Info: GaAs MMIC CSY 210 Preliminary Data Sheet • • • • • • TX/RX- and diversity switch for mobile communications High input power capability 36 dBm P– 1 dB @ 3 V operation, 900 MHz High linearity (57 dBm IP3 @ 900 MHz) Low insertion loss (0.6 dB @ 900 MHz)

DIN 6784 c1

Abstract: BCR108T BFR380T E6327 SC75
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

smd marking VB

Abstract: SMD MARKING RFC c4 09 smd marking code DIN 6784 c1 ISO DIN 6784
Contextual Info: GaAs MMIC CSY 210 Preliminary Data Sheet • • • • • • TX/RX- and diversity switch for mobile communications High input power capability 36 dBm P– 1 dB @ 3 V operation, 900 MHz High linearity (57 dBm IP3 @ 900 MHz) Low insertion loss (0.6 dB @ 900 MHz)