DIN 6784 C1 Search Results

infineon marking code E1 sot23

Abstract: E6327 DIN 6784 DIN 6784 c1 marking 2x SOT323 WM infineon marking code B2 SOT23 marking code 10 sot23 WM Marking code BCR183
Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package BCR141/F/L3

marking WSs

Contextual Info: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package BCR169/F/L3

DIN 6784 c1

Abstract: E6327 BCR148W
Contextual Info: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2=47 kΩ • BCR148S / U: Two internally isolated transistors with good matching in one multichip package

DIN 6784

Abstract: E6327 infineon marking code E1 sot23 marking code 10 sot23 BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U
Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package

DIN 6784 c1

Abstract: DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23
Contextual Info: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

WFs transistor

Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
Contextual Info: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Contextual Info: BCR129. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10 kΩ • BCR129S: Two internally isolated transistors with good matching in one multichip package BCR129/F/L3 BCR129T/W

marking WGs sot23

Abstract: transistor marking code wgs BCR116
Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package BCR116/F/L3

Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

DIN 6784

Abstract: SOT363 Marking 1B BCR198W
Contextual Info: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package

marking WHS sot23

Abstract: transistor marking code whs
Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3

DIN 6784

Contextual Info: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119/F/L3 BCR119T/W

DIN 6784

Abstract: DIN 6784 c1 infineon marking code E1 sot23 E6327 marking code 10 sot23 top marking c2 sot23 BCR135 BCR135F BCR135L3 BCR135S
Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package BCR135/F/L3

marking code TS

Contextual Info: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

marking code 52 diode

Contextual Info: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W 3 D 2 D 1 1 1 2 2 Type BBY51 BBY51-02L* BBY51-02W BBY51-03W

Contextual Info: Thermal Overcurrent Circuit Breaker 3130 Description Single, two and three pole rocker switch/thermal trip free circuit breakers S-type TO CBE to EN 60934 of compact design for snap-in panel mounting. Available either with protection on one/both/all poles or,

DIN 6784

Abstract: BCR153 BCR153F BCR153L3 BCR153T BCR153U SC74 SC75
Contextual Info: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

DIN 6784 c1

Contextual Info: BCR523U NPN Silicon Digital Transistor Array 5
Switching circuit, inverter, interface circuit, 4 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package 3 2
Built in bias resistor (R1=1k, R2 =10k) 1 C1 B2 E2

DIN 16901 150

Abstract: 15336029
Contextual Info: 12 I - y - _3_ 10 Benennung Title Pos. A-A 90° ia ,i 11.21 (3D 5,9 0.1 (D 2 3 I I ID-No. Flachstehhülsenqehäuse 3 pol. Receptacle housing 3 way Flachstehhülsenqehäuse 3 pol. Receptacle housing 3 way Verriegelungskappe 3 pol. Secondary lock 3 way

marking 5bs

Abstract: BC807
Contextual Info: BC807U PNP Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

Contextual Info: BC817U NPN Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

marking 1ks

Abstract: BCV61
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration