| BCR133 |  | Infineon Technologies | Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 10.0 k?; hFE (min): 30.0; Vi (on) (min): 1.0 2mA / 0.3V; | Original | PDF | 144.91KB | 12 | 
| BCR133 |  | Infineon Technologies | R1=10 k ? R2=10 k ? | Original | PDF | 42.5KB | 4 | 
| BCR133 |  | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | PDF | 465.63KB | 37 | 
| BCR133 |  | Siemens | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Original | PDF | 36.52KB | 4 | 
| BCR133 |  | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | PDF | 35.1KB | 1 | 
| BCR133 |  | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | PDF | 98.69KB | 1 | 
| BCR 133 B6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 | Original | PDF | 868.49KB |  | 
| BCR133B6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 | Original | PDF |  | 11 | 
| BCR133E6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 | Original | PDF |  | 11 | 
| BCR133E6327HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 | Original | PDF | 868.49KB |  | 
| BCR133E6393 |  | Infineon Technologies | SMALL SIGNAL BIPOLAR TRANSISTOR | Original | PDF | 892.23KB |  | 
| BCR133E6393HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN SOT23 | Original | PDF | 868.49KB |  | 
| BCR133E6433 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN DGTL AF SOT-23 | Original | PDF |  | 11 | 
| BCR133E6433HTMA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.2W SOT23-3 | Original | PDF | 868.49KB |  | 
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| BCR133F |  | Infineon Technologies | NPN Silicon Digital Transistor | Original | PDF | 499.56KB | 10 | 
| BCR 133F B6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 | Original | PDF | 868.49KB |  | 
| BCR133FB6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 | Original | PDF |  | 11 | 
| BCR 133F E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 | Original | PDF | 868.49KB |  | 
| BCR133FE6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 | Original | PDF |  | 11 | 
| BCR133FE6327 |  | Infineon Technologies | Digital Transistors - R1= 10 kOhm , R2= 10 kOhm | Original | PDF | 209.07KB | 9 |