| BCR116S |
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Infineon Technologies
|
NPN Silicon Digital Transistor Array |
Original |
PDF
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117.76KB |
4 |
| BCR116S |
|
Infineon Technologies
|
NPN Silicon Digital Transistor |
Original |
PDF
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499.7KB |
10 |
| BCR116S |
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Infineon Technologies
|
Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 4.7 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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231.7KB |
14 |
| BCR116SE6327 |
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Infineon Technologies
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Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
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PDF
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11 |
| BCR116SE6327BTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
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868.68KB |
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| BCR116SE6727 |
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Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
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11 |
| BCR 116S E6727 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
868.68KB |
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| BCR116SH6327 |
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Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
11 |
| BCR116SH6327XTSA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
868.68KB |
|
| BCR116SH6727 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
11 |
| BCR 116S H6727 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
868.68KB |
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