| BCR169 |  | Infineon Technologies | PNP Silicon Digital Transistor | Original | PDF | 42.31KB | 4 | 
| BCR169 |  | Infineon Technologies | Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; R1 (typ): 4.7 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; | Original | PDF | 256.33KB | 12 | 
| BCR169 |  | Unknown | NPN Silicon Digital Transistor | Original | PDF | 116.31KB | 4 | 
| BCR169 |  | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | PDF | 465.63KB | 37 | 
| BCR169 |  | Siemens | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Original | PDF | 36.07KB | 4 | 
| BCR169E6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 200MW SOT23-3 | Original | PDF |  | 11 | 
| BCR169E6327HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 200MW SOT23-3 | Original | PDF | 868.18KB |  | 
| BCR169F |  | Infineon Technologies | PNP Silicon Digital Transistor | Original | PDF | 505.61KB | 10 | 
| BCR 169F E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW TSFP-3 | Original | PDF | 868.18KB |  | 
| BCR169FE6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW TSFP-3 | Original | PDF |  | 11 | 
| BCR169FE6327 |  | Infineon Technologies | Digital Transistors - R1= 4,7 kOhm | Original | PDF | 218.93KB | 10 | 
| BCR169L3 |  | Infineon Technologies | PNP Silicon Digital Transistor | Original | PDF | 505.61KB | 10 | 
| BCR 169L3 E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW TSLP-3 | Original | PDF | 320.31KB |  | 
| BCR169L3E6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW TSLP-3 | Original | PDF |  | 19 | 
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| BCR169L3E6327 |  | Infineon Technologies | Digital Transistors - R1= 4,7 kOhm | Original | PDF | 218.93KB | 10 | 
| BCR169S |  | Infineon Technologies | PNP Silicon Digital Transistor Array | Original | PDF | 117.16KB | 4 | 
| BCR169S |  | Infineon Technologies | SOT363 package | Original | PDF | 43.09KB | 4 | 
| BCR169S |  | Infineon Technologies | Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: PNP; R1 (typ): 4.7 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; | Original | PDF | 256.33KB | 12 | 
| BCR169S |  | Siemens | PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) | Original | PDF | 44.44KB | 4 | 
| BCR169S |  | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | PDF | 465.63KB | 37 |