| BCR129S |
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Infineon Technologies
|
NPN Silicon Digital Transistor Array |
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42.57KB |
4 |
| BCR129S |
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Infineon Technologies
|
SOT363 ICmax = 100mA |
Original |
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42.81KB |
4 |
| BCR129S |
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Infineon Technologies
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Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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209.87KB |
12 |
| BCR129S |
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Siemens
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NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
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44.27KB |
4 |
| BCR129SE6327 |
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Infineon Technologies
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Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
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11 |
| BCR129SE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
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867.42KB |
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| BCR129SH6327 |
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Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
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11 |
| BCR129SH6327XTSA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
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867.42KB |
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