| BCR135S |
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Infineon Technologies
|
NPN Silicon Digital Transistor Array |
Original |
PDF
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43.63KB |
4 |
| BCR135S |
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Infineon Technologies
|
SOT363 ICmax = 100mA |
Original |
PDF
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43.69KB |
4 |
| BCR135S |
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Infineon Technologies
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Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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210.88KB |
12 |
| BCR135S |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
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465.63KB |
37 |
| BCR135S |
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Siemens
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NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
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45.35KB |
4 |
| BCR135SE6327 |
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Infineon Technologies
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Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
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11 |
| BCR135SE6327BTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
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868.59KB |
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| BCR135SH6327 |
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Infineon Technologies
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Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
11 |
| BCR135SH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
868.59KB |
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| BCR135SH6827 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
11 |
| BCR135SH6827XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
868.59KB |
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