BIPOLAR TRANSISTORS SELECTION GUIDE Search Results

Insulated Gate Bipolar Transistors

Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

BFG87

Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Contextual Info: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"

ZTX653 equivalent

Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
Contextual Info: SELECTION GUIDE Discrete semiconductors Bipolar transistors | Diodes | MOSFETs Discrete semiconductors Bipolar transistors Zetex Semiconductors provides product designers with a broad range of discrete semiconductor components renowned for their quality, high performance and optimized

Contextual Info: Small Signal Silicon Bipolar Transistors yuu in r * yyR 5ÄÄ SS* Selection Guide .3-2

BUT11ApX equivalent

Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
Contextual Info: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

SOT123 Package

Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the

mn2510

Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

AT-41435

Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
Contextual Info: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

53 diode

Contextual Info: ' -Jr "':•:if.^r.'.tT.~-‘ — t - '7 77 7"^ CONTENTS Page Intro d u ctio n. 2 Bipolar Transistors Quick Selection G u id e .3

sm 4109

Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

BUT11APX equivalent

Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
Contextual Info: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: Power Bipolar Transistors CONTENTS Page PREFACE 3 INDEX 5 SELECTION GUIDE 9 GENERAL 17 APPLICATION INFORMATION 39 DEVICE DATA in alphanumeric sequence 41 PACKAGE OUTLINES 753 LEADFORM OPTIONS 763 MOUNTING INSTRUCTIONS 767 DATA HANDBOOK SYSTEM 781

uPA63

Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

T4148

Abstract: TIC 160 D sm 4109 TIC 160 M T-41410 TIC+160+M
Contextual Info: What H EW LETT 1 "KM PA CK A R D Silicon Bipolar Transistors Selection Guide NF0 and Ga are specified at a low noise bias point, while Pt dB, Gj dB, and IS2lEl- are specified at bias points which optimize these parameters. Low N oise Transistors Typical Specifications @ 25°C Case Temperature

2SD921

Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
Contextual Info: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767

42181

Contextual Info: Silicon Low Noise Bipolar Transistors Transistor Selection Guide Series Geometry Nominal fT GHz Nominal Optimum Noise Figure at Current (mA) 42161 42111 42141 42151 42000 42197 42020 42051 42217 42120 42181 72 60 63 63 60 60 20 55 55 70 02 7.0 5.5 4.5 4.5