AT42010 Search Results

136.21

Abstract: AT42010 AT-42010 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz

Contextual Info: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

sm 4109

Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

"Bipolar Transistor"

Abstract: TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 AT-42010 TRANSISTOR 200 GHZ UHF transistor GHz S21E
Contextual Info: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron

AT-42010

Abstract: S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz

ku-band pll lnb

Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

sm 4109

Abstract: transistor G1 SOT-23 AT-30511 AT-42010 SOT-143 g1 AT-41486 AT-30533 AT-31011 AT-32011 AT-32033
Contextual Info: Low Noise Transistors Typical Specifications @ 25°C Case Temperature Part Number AT-30511 Frequency (GHz) VCE (V) NFo (dB) Ga (dB) P1 dB (dBm) 0.9 2.7 1.1 16.0 +7.0 G1 dB |S21E|2 @ 1.0 GHz (dBm) (dB) Package Page No. 16.5 17.9 [1] SOT-143 plastic SM 4-23

ISDB-t modulator

Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical PldB at 2.0 GHz 20.5dBmTypicalP1 fflat4.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz

avantek

Abstract: Avantek, Inc AT-42010 T-31-21 AVANTEK oscillator
Contextual Info: EOE D A V A N T E K INC Q • GGQhMfih T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor- avan tek ' - Avantek 100 mil Package Features • High Output Power: 12.0 dBm typical Pi ¿b at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

Bipolar Transistors Selection Guide

Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
Contextual Info: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

Contextual Info: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

transistor C200

Abstract: AT-42010 IFD-53010 S21E AT42010
Contextual Info: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency ­performance. The AT-42010 is housed in a hermetic, high reliability

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101