136.21 Search Results

Contextual Info: FH1 High Dynamic Range FET Product Features • • • • • • • 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years Applications •

jammer slot machine

Contextual Info: ALM-3012 GNSS LNA-Filter Front-End Module with optional Differential Outputs Data Sheet Description Features Avago Technologies’ ALM-3012 is an ultra low-noise GNSS Global Navigation Satellite System front-end module that combines a low-noise amplifier (LNA) with

1456NEK4

Contextual Info: 8 7 6 5 147.64 mm [5.813 in] 3 2 1 247.65 mm [9.750 in] R2.44 mm 4X [0.096 in] D 4 D 93.14 mm [3.667 in] 96.39 mm [3.795 in] 148.29 mm [5.838 in] 219.08 mm [8.625 in] 244.40 mm [9.622 in] R6.35 mm 2X [0.250 in] 254.00 mm [10.000 in] C C 101.60 mm [4.000 in]

13009 TRANSISTOR equivalent

Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to

Contextual Info: Low Phase Noise Voltage Controlled Oscillator 5V Tuning for PLL IC's ROS-690+ 655 to 690 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pushing • Low Pulling • 0.5-5V Tuning Voltage range • Aqueous washable CASE STYLE: CK605

m 9583

Contextual Info: Coaxial Voltage Controlled Oscillator 5V Tuning for PLL IC's ZX95-1023+ 945 to 1023 MHz Features • linear tuning characteristics • low phase noise • low pushing • protected by US patent 6,790,049 CASE STYLE: GB956 Applications •r&d • lab • instrumentation

Contextual Info: Coaxial Voltage Controlled Oscillator 5V Tuning for PLL IC's ZX95-690+ 655 to 690 MHz Features • linear tuning characteristics • low phase noise • low pushing • low pulling • 0.5-5V tuning voltage range • protected by US patent 6,790,049 CASE STYLE: GB956

transistor c 5936

Abstract: 2SC5847 IC 4435 D2502 7803 3V IT04914 8767 transistor marking 4934
Contextual Info: Ordering number : ENN7328 2SC5847 NPN Epitaxial Planar Silicon Transistor 2SC5847 High-Frequency Low-Noise Amplifier and OSC Applications • • • Package Dimensions Low noise : NF=1.5dB typ f=2GHz . unit : mm High cutoff frequency : fT=6.0GHz typ (VCE=1V). 2106A

Contextual Info: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band

FH1G

Abstract: JESD22-A114 FH1-G
Contextual Info: FH1 High Dynamic Range FET Product Features x x x x x x x 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years Applications x x x x Mobile Infrastructure

Contextual Info: Frequency Synthesizer 50Ω KSN-977A-119+ 937 to 977 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK801 Product Overview The KSN-977A-119+ is a Frequency Synthesizer, designed to operate from 937 to 977 MHz

ZX95-690-S

Abstract: ZX95-690
Contextual Info: Coaxial Voltage Controlled Oscillator 5V Tuning for PLL IC's ZX95-690+ 655 to 690 MHz Features • Linear tuning characteristics • Low phase noise • Low pushing • Low pulling • 0.5-5V tuning voltage range • Protected by US patent 6,790,049 CASE STYLE: GB956

136.21

Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
Contextual Info: S-Parameter Data for TGA4501-SCC TGA4501-EPU Vd = 6V, Id = 2.12A ±5% Frequency GHz 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 21 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22 22.1 22.2 22.3 22.4 22.5 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 23.5

Contextual Info: FH101 The Communications Edge TM Product Information High Dynamic Range FET Product Features x x x x x x 50 – 3000 MHz Low Noise Figure 18 dB Gain +36 dBm OIP3 +18 dBm P1dB Single or Dual Supply Operation x Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years

FET FH1G

Contextual Info: FH1 High Dynamic Range FET Product Features 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years • • • • • • • Applications •

130-082

Abstract: ic 38438 38438 IC 112246 128777 890 f 642 ic pdf datasheet PIN CONFIGURATION IC 555 THN6201 dc 38438 33171
Contextual Info: THN6201 series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain

901 704 16 08 55

Abstract: amplifier mmic 576 DC TO 18GHZ RF AMPLIFIER MMIC transistor zo 607 ZO 607 MA A004R AMMP-6425 DB21
Contextual Info: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm

Contextual Info: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm

968E

Contextual Info: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm

ADF4113

Contextual Info: Frequency Synthesizer 50Ω KSN-977A-119+ 937 to 977 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK801 Product Overview The KSN-977A-119+ is a Frequency Synthesizer, designed to operate from 937 to 977 MHz

Contextual Info: FH101 High Dynamic Range FET Product Features • • • • • • • • 50 – 4000 MHz 18 dB Gain +18 dBm P1dB +36 dBm OIP3 Low Noise Figure Single or Dual Supply Operation MTTF > 100 years Lead free/green/RoHS-compliant SOT-89 Package Applications

CGH40006

Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

GPS474

Abstract: BROAD473 RADAR461 EW434 EW450 SATCOM302 EW432 WR112 WR112 to sma SATCOM345
Contextual Info: BSC Filters Part Product Interface I/O Pass Type Freq Cat GPS474 Filter SMA/SMA Notch S 1.54542 BROAD473 Filter N -TYPE/N-TYPE Notch S EW443 Filter SMA/SMA Lowpass Wideband 2.4 EW439 Filter S/mount Lowpass Wideband 2.5 EW446 Filter SMA/SMA Lowpass Wideband

130-082

Abstract: ic 38438 33171 62944 63950 128777 THN6201 THN6201E THN6201S THN6201U
Contextual Info: THN6201 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain