RO5880 Search Results

BGF901-20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of

Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

BGF844

Abstract: SR200 SR400 SR600 smd INCOMING INSPECTION procedure
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

CGH40006P-TB

Abstract: RO5880 006P CGH40006P JESD22 CGH40006
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

thermal compound wps II

Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

thermal compound wps II

Abstract: BGF944 GSM900 SR200 SR400 RO5880 MBL813 gp 940
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of

CGH40006

Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

RO5880

Abstract: rf amplifier marking catalog smd top marking code 940 smd trans. Z2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of

thermal compound wps II

Abstract: BGF1901-10 thermal compound wps GSM1900 SR200 SR400 RO5880
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification 2003 Nov 17 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

MLE340

Abstract: thermal compound wps II SR200 SR400 BGF1801-10 GSM1800
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specification 2003 Dec 15 Philips Semiconductors Product specification GSM1800 EDGE power module BGF1801-10 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of

ACPR750

Abstract: BGF802-20 CDMA800
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of

BGF944

Abstract: GSM900 SR200 SR400
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of

Contextual Info: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave

Contextual Info: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave

PHILIPS 4330 030 36300

Abstract: philips ceramic capacitors philips ferroxcube BGY1816 BP317 RO5880
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY1816 UHF amplifier module Product specification Supersedes data of 1998 May 27 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY1816 FEATURES PINNING - SOT365A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY2016 UHF amplifier module Product specification Supersedes data of 2000 Jan 04 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY2016 FEATURES PINNING - SOT365A

thermal compound wps II

Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of

thermal compound wps II

Abstract: austerlitz BGF844 SR200 SR400 SR600
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

PHILIPS 4330 030 36300

Abstract: philips ceramic capacitors philips ELECTROLYTIC capacitors philips ferroxcube philips resistor 2322-195 BGY1816S BP317 RO5880
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D388 BGY1816S UHF amplifier module Product specification Supersedes data of 1999 Apr 13 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY1816S FEATURES PINNING - SOT501A

CGH40006P

Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

RO5880

Abstract: BGY1916 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY1916 UHF amplifier module Product specification Supersedes data of 1998 May 27 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY1916 FEATURES PINNING - SOT365A

BGF802-20

Abstract: ACPR750 CDMA800
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 24 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of