BGF901-20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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m3d737bgf901-20gsm900sca75+1613524/01/pp12
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thermal compound wps II
Abstract: BGF944 GSM900 SR200 SR400 RO5880 MBL813 gp 940
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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m3d737bgf944gsm900ot365c+8sca75613524/07/pp12thermal compound wps iisr200sr400ro5880mbl813gp 940
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RO5880
Abstract: rf amplifier marking catalog smd top marking code 940 smd trans. Z2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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m3d737bgf944gsm90015-aug-02+4ro5880rf amplifier marking catalogsmd top marking code 940smd trans. z2
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BGF944
Abstract: GSM900 SR200 SR400
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of
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m3d737bgf944gsm900ot365c+4sca75613524/06/pp12sr200sr400
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