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    CGH40 Search Results

    CGH40 Datasheets (42)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGH40006P
    Cree RF FETs, Discrete Semiconductor Products, TRANS 8W RF GAN HEMT 440109 PKG Original PDF 13
    CGH40006P-AMP
    Wolfspeed CGH40006P DEV BOARD WITH HEMT Original PDF 1.66MB
    CGH40006P-AMP
    Wolfspeed CGH40006P DEV BOARD WITH HEMT Original PDF 1.66MB
    CGH40006P-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40006P Original PDF 13
    CGH40006S
    Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 3X3QFN Original PDF 15
    CGH40006S-AMP1
    Wolfspeed FET RF HEMT 28V 100MA 440203 Original PDF 1.46MB
    CGH40006S-AMP1
    Wolfspeed FET RF HEMT 28V 100MA 440203 Original PDF 3.49MB
    CGH40006S-KIT
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, FET RF HEMT 28V 100MA 440203 Original PDF 15
    CGH40010
    Cree 10 W, RF Power GaN HEMT Original PDF 785.12KB 12
    CGH40010F
    Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440166 PKG Original PDF 14
    CGH40010F-AMP
    Wolfspeed CGH40010F DEV BOARD WITH HEMT Original PDF 1.65MB
    CGH40010F-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40010 Original PDF 14
    CGH40010P
    Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440196 Original PDF 14
    CGH40025F
    Cree RF FETs, Discrete Semiconductor Products, TRANS 25W RF GAN HEMT 440166 PKG Original PDF 13
    CGH40025F
    Cree 25 W, RF Power GaN HEMT Original PDF 968.12KB 12
    CGH40025F-AMP
    Wolfspeed CGH40025F DEV BOARD WITH HEMT Original PDF 1.61MB
    CGH40025F-AMP
    Wolfspeed CGH40025F DEV BOARD WITH HEMT Original PDF 1.09MB
    CGH40025F-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40025 Original PDF 13
    CGH40035F
    Cree RF FETs, Discrete Semiconductor Products, TRANS 35W RF GAN HEMT 440193 PKG Original PDF 13
    CGH40035F-AMP
    Wolfspeed CGH40035F DEV BOARD WITH HEMT Original PDF 1.73MB
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    CGH40 Price and Stock

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    Essentra Components RCGH-40

    Horizontal Card Guide - Accepts Panel Thickness 1.6 mm (0.062 in) - Overall Length 101.6 mm (4.000 in)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics RCGH-40 908
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    • 10000 $0.44
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    Newark RCGH-40 Bulk 500
    • 1 -
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    • 1000 $0.50
    • 10000 $0.46
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    Bisco Industries RCGH-40 9
    • 1 -
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    DB Roberts RCGH-40 16
    • 1 $1.17
    • 10 $1.17
    • 100 $1.17
    • 1000 $1.17
    • 10000 $1.17
    Buy Now

    3M Interconnect 10Y-E8H-CGH-4.00

    800G OSFP AEC CABLE ASSEMBLIES 10Y SERIES - Bulk (Alt: 7100395510)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 10Y-E8H-CGH-4.00 Bulk 40 Weeks, 2 Days 10
    • 1 -
    • 10 $1951.97
    • 100 $1766.95
    • 1000 $1707.98
    • 10000 $1707.98
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    Newark 10Y-E8H-CGH-4.00 Bulk 10
    • 1 -
    • 10 $1882.00
    • 100 $1817.55
    • 1000 $1817.55
    • 10000 $1817.55
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    3M 10Y-E8H-CGH-4.00

    3M 800G OSFP AEC CABLE ASSEMBLIES 10Y SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 10Y-E8H-CGH-4.00 Bulk 36 Weeks 10
    • 1 -
    • 10 $2322.85
    • 100 $2322.85
    • 1000 $2322.85
    • 10000 $2322.85
    Get Quote

    Essentra Components RCGH-40 (70208907)

    RACK CARD GUIDE; 4 X .24 X .175 (LXWXH); HOLLOW PIN MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS RCGH-40 (70208907) Bulk 8 Weeks 500
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    • 1000 $0.90
    • 10000 $0.77
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    Knowles CDE CGH402T350X3L

    Aluminum Electrolytic Capacitor - Radial - Screw Terminals - 4000uF (–10 +50%) - 350VDC - 3in dia x 3.625in high
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CGH402T350X3L
    • 1 -
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    • 100 $157.13
    • 1000 $157.13
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    CGH40 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    str w 6554 a

    Abstract: STR 6554 a
    Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    cgh40010cgh4040010pstr w 6554 a+1str 6554 a PDF

    Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    cgh40006pcgh40 PDF

    cgh40120F

    Abstract: CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120
    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    cgh40120fcgh4012cap 0805 atc 600f154-04+4cgh40120f-tb095.91cgh401cgh40120 PDF

    CGH40180PP

    Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    cgh40180ppcgh4018cgh40180pp-tbjesd22+5l30 type rf microwave power transistortransistor k 3562atc600fcgh401smd transistor s2p PDF

    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    cgh40180ppcgh4018 PDF

    Cree Microwave

    Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    cgh40010cgh4040010pcree microwave PDF

    CGH40006P-TB

    Abstract: RO5880 006P CGH40006P JESD22 CGH40006
    Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    cgh40006pcgh40cgh40006p-tbro5880+3006pjesd22cgh40006 PDF

    CGH40045

    Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045pcgh40045f+3jesd22an 17821 acgh40045-tb PDF

    STR 6307 POWER

    Abstract: RO4350B STR 6735 470PF CGH4003 CGH40035 CGH40035F CGH40035F-TB CGH40035-TB JESD22
    Contextual Info: CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    cgh40035fcgh4003cgh40035str 6307 power+6ro4350bstr 6735470pfcgh40035f-tbcgh40035-tbjesd22 PDF

    CGH40090PP

    Abstract: 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd
    Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    cgh40090ppcgh400910ufcgh40090pp-tb+2jesd22transistor 702 f smd PDF

    STR F 6168

    Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p
    Contextual Info: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


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    cgh40025cgh400240025fstr f 6168+7cgh40025-tbj326cree microwavecgh40025fjesd22cgh40025phemt .s2p PDF

    CGH40180PP

    Abstract: ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623
    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    cgh40180ppcgh4018atc600fcgh40180+6cree microwavecgh40180pp-tbjesd22l30 type rf microwave power transistorcgh4011623 PDF

    CGH40090PP

    Abstract: CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p
    Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    cgh40090ppcgh4009cgh40090pp-tbcree microwave+3jesd2210ufhemt .s2p PDF

    TRANSISTOR SMD 9014

    Abstract: 9014 SMD CGH40090PP CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B
    Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    cgh40090ppcgh4009transistor smd 90149014 smd+6cgh40090pp-tb9014 transistor smdcree microwavelk 10 0112 6410ufro4350b PDF

    CGH40045

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045p PDF

    CGH40045F

    Abstract: CGH40045 10UF cree L2
    Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    cgh40045cgh4004cgh40045f10uf+1cree l2 PDF

    Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    cgh40120fcgh4012 PDF

    CGH40006

    Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
    Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    cgh40006pcgh40006cgh40f 14019 amplifier+6cgh40006p-tbtransistor j352006pro5880j35216649 PDF

    Contextual Info: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40025cgh400240025f PDF

    Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    cgh40006pcgh40 PDF

    Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    cgh40180ppcgh4018 PDF

    CGH40045F

    Abstract: CGH40045 ATC100B Cree Microwave 10UF JESD22
    Contextual Info: CGH40045F 45 W, RF Power GaN HEMT Cree’s CGH40045F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    cgh40045fcgh4004cgh40045atc100b+3cree microwave10ufjesd22 PDF

    CGH40035

    Abstract: str f 6267 CGH40035F of str 6309 8402 0121 Cree Microwave 10UF 470PF str 6267 f CGH40035F-TB
    Contextual Info: CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    cgh40035cgh4003str f 6267cgh40035f+7of str 63098402 0121cree microwave10uf470pfstr 6267 fcgh40035f-tb PDF

    str w 6554 a

    Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025
    Contextual Info: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain


    Original
    cgh40025cgh400240025fstr w 6554 a+8str 6554str w 6554str 6754ro4350ro4350b0618cree microwavestr 6554 a PDF