40045P Search Results
40045P Price and Stock
Fulham Company Inc T1A2240045P-10EELed Driver, Constant Current, 0.45A, 10W; |Fulham T1A2240045P-10EE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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T1A2240045P-10EE | Bulk | 100 | 1 |
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Buy Now | |||||
Fulham Company Inc T1A1240045P-10EELed Driver, Constant Current, 0.45A, 10W; |Fulham T1A1240045P-10EE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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T1A1240045P-10EE | Bulk | 97 | 1 |
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Buy Now | |||||
MACOM CG2H40045PTrans RF MOSFET N-CH 120V 6A 3-Pin Case 440206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CG2H40045P | 40 |
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MACOM MSS40-045-P86MEDIUM BARRIER SILICON SCHOTTKY DIODES |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MSS40-045-P86 | 75 |
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40045P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CGH40045
Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
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Original |
cgh40045cgh4040045pcgh40045f+3 | |
CGH40045Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high |
Original |
cgh40045cgh4040045p | |
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Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high |
Original |
cgh40045cgh4040045p | |
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Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high |
Original |
cgh40045cgh4040045p | |
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Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high |
Original |
cgh40045cgh4040045p | |
CGH40045Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high |
Original |
cgh40045cgh4040045p | |
CGH40045-TB
Abstract: CGH40045
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Original |
cgh40045cgh4040045pcgh40045-tb |