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    40045P Search Results

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    PACE WORLDWIDE 1124-0045-P1

    Angled Micro-Wave
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    DigiKey 1124-0045-P1 Bulk 50 6
    • 1 -
    • 10 $18.71
    • 100 $17.78
    • 1000 $17.78
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    MACOM CGH40045P

    RF MOSFET HEMT 28V 440206
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    DigiKey CGH40045P Tray 2 1
    • 1 $432.65
    • 10 $432.65
    • 100 $364.85
    • 1000 $364.85
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    Mouser Electronics () CGH40045P
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    CGH40045P
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    MACOM CG2H40045P

    RF MOSFET HEMT 28V 440206
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    DigiKey CG2H40045P Tray 40
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    • 100 $399.85
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    Mouser Electronics () CG2H40045P
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    • 100 $333.85
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    CG2H40045P
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    Richardson RFPD CG2H40045P 40
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    • 100 $242.76
    • 1000 $242.76
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    MACOM MSS40-045-P86

    Schottky Diodes & Rectifiers Schottky Diode,Chip,Package P86
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    Mouser Electronics () MSS40-045-P86
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    MSS40-045-P86
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    Richardson RFPD MSS40-045-P86 75
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    Wolfspeed CG2H40045P

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
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    Vyrian CG2H40045P 12,785
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    40045P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CGH40045

    Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB PDF

    CGH40045

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    CGH40045

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    CGH40045-TB

    Abstract: CGH40045
    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045-TB PDF