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    40045P Search Results

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    Fulham Company Inc T1A2240045P-10EE

    Led Driver, Constant Current, 0.45A, 10W; |Fulham T1A2240045P-10EE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark T1A2240045P-10EE Bulk 100 1
    • 1 $34.81
    • 10 $31.09
    • 100 $26.03
    • 1000 $26.03
    • 10000 $26.03
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    Fulham Company Inc T1A1240045P-10EE

    Led Driver, Constant Current, 0.45A, 10W; |Fulham T1A1240045P-10EE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark T1A1240045P-10EE Bulk 97 1
    • 1 $33.67
    • 10 $30.08
    • 100 $25.19
    • 1000 $25.19
    • 10000 $25.19
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    MACOM CG2H40045P

    Trans RF MOSFET N-CH 120V 6A 3-Pin Case 440206
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    Richardson RFPD CG2H40045P 40
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    • 100 $242.76
    • 1000 $242.76
    • 10000 $242.76
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    MACOM MSS40-045-P86

    MEDIUM BARRIER SILICON SCHOTTKY DIODES
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    Richardson RFPD MSS40-045-P86 75
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    40045P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CGH40045

    Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045pcgh40045f+3jesd22an 17821 acgh40045-tb PDF

    CGH40045

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045p PDF

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045p PDF

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045p PDF

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045p PDF

    CGH40045

    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045p PDF

    CGH40045-TB

    Abstract: CGH40045
    Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    cgh40045cgh4040045pcgh40045-tb PDF