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Thomas & Betts A1400-10PG Metal Channel - 14 Gauge - 1-5/8 Inch x 1-5/8 Inch - Length 10 Feet - Pre-Galvanized Steel.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	A1400-10PG					1 - 10 - 100 - 1000 $8.59 10000 $8.59	Buy Now
Advanced Thermal Solutions Inc ATS040040010-PF-13I CROSS CUT EXTRUDED HEATSIN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	ATS040040010-PF-13I					1 - 10 - 100 $7.19 1000 $7.19 10000 $7.19	Buy Now
Avnet Americas	ATS040040010-PF-13I	Bulk		8 Weeks	100	1 - 10 - 100 $7.49 1000 $6.38 10000 $5.24	Buy Now
Newark	ATS040040010-PF-13I	Bulk			100	1 - 10 - 100 $10.21 1000 $9.77 10000 $9.77	Buy Now
Thomas & Betts LE540010PFM10 540010 PLAIN FINISH MARKED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	LE540010PFM10					1 $25.26 10 $22.54 100 $20.07 1000 $19.53 10000 $19.53	Buy Now
Thomas & Betts 540010PFM10 Copper Parallel Splice - 83700/119500 Circular Mil Range - Plain Finish Marked 1/0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	540010PFM10					1 - 10 $16.42 100 $13.60 1000 $12.53 10000 $12.53	Buy Now
Newark	540010PFM10	Bulk			1	1 $4.76 10 $4.76 100 $3.89 1000 $3.12 10000 $3.12	Buy Now
Thomas & Betts B1400-10PG Channel - 14 Gauge - 1-5/8 Inch x 13/16 Inch - Length 10 Feet - Pre-Galvanized Steel.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	B1400-10PG					1 - 10 - 100 - 1000 $7.01 10000 $7.01	Buy Now

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40010P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
str w 6554 a Abstract: STR 6554 a Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p str w 6554 a +1str 6554 a	PDF
Cree Microwave Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p cree microwave	PDF
STR W 5753 a Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p str w 5753 a +8str 5753 str w 5753 8891 8952 cree microwave 10uf 470pf cgh40010f	PDF
str w 6554 a Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808 Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p str w 6554 a +9cgh40010 large signal model cgh40010f str w 6554 cgh40015 cgh40015f str 6554 a cgh40010p str f 6554 str 6808	PDF
CGH40010 Abstract: CGH40010F 10UF 470PF CGH40010-TB Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p cgh40010f +310uf 470pf cgh40010-tb	PDF
str 8656 Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p str 8656 +8str g 8656 str 6353 str 6308 8627 8656 str a 6169 10uf 470pf	PDF
CGH40010F Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22 Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p cgh40010f +8str w 6554 a cgh40015f cgh40010 large signal model transistor s2p str w 6554 cgh40015 str 6554 jesd22	PDF
CGH40010F Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p cgh40010f +8str w 6554 cgh40010 large signal model cgh40010-tb str w 6554 a transistor rf s-parameters str f 6554 str 6554 a cgh40010p	PDF
Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	cgh40010 cgh40 40010p	PDF