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    40010P Search Results

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    40010P Price and Stock

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    Advanced Thermal Solutions Inc ATS040040010-PF-13I

    CROSS CUT HEATSINK 40X40X10MM
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    DigiKey ATS040040010-PF-13I Bulk 21 1
    • 1 $8.90
    • 10 $7.88
    • 100 $6.97
    • 1000 $6.17
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    Avnet Americas ATS040040010-PF-13I Bulk 8 Weeks 100
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    • 1000 $5.81
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    Newark ATS040040010-PF-13I Bulk 100
    • 1 $9.36
    • 10 $9.36
    • 100 $9.36
    • 1000 $8.42
    • 10000 $6.46
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    Thomas & Betts B1400-10PG

    CHNL 14GA 1-5/8X13/16 10FT PG ST
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    DigiKey B1400-10PG Bulk 500
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    Master Electronics B1400-10PG
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    MACOM CG2H40010P

    RF MOSFET HEMT 28V 440196
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    DigiKey CG2H40010P Tray 250
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    Mouser Electronics CG2H40010P 246
    • 1 $184.55
    • 10 $157.29
    • 100 $78.16
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    Richardson RFPD CG2H40010P 76 80
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    • 100 $79.72
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    Thomas & Betts A1400-10PG

    CHNL 14GA 1-5/8X1-5/8 10FT PG ST
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    DigiKey A1400-10PG Bulk 500
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    Master Electronics A1400-10PG
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    Thomas & Betts 540010PFM10

    540010 PLAIN FINISH MARKED 1/0
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    DigiKey 540010PFM10 Bulk 1
    • 1 $16.08
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    Newark 540010PFM10 Bulk 100
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    • 100 $3.22
    • 1000 $2.58
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    Master Electronics 540010PFM10
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    • 10 $13.59
    • 100 $11.26
    • 1000 $10.35
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    Find more 40010P price and stock on Findchips.com

    40010P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    str w 6554 a

    Abstract: STR 6554 a
    Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a PDF

    Cree Microwave

    Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave PDF

    STR W 5753 a

    Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
    Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F PDF

    str w 6554 a

    Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808
    Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808 PDF

    CGH40010

    Abstract: CGH40010F 10UF 470PF CGH40010-TB
    Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F 10UF 470PF CGH40010-TB PDF

    str 8656

    Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF
    Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P str 8656 str g 8656 str 6353 str 6308 8627 8656 STR A 6169 10UF 470PF PDF

    CGH40010F

    Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22
    Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 JESD22 PDF

    CGH40010F

    Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P
    Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P PDF

    Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P PDF