2SC446 Search Results

2SC4461

Contextual Info: Ordering num ber:EN 33332 2SC4461 NPN Triple Diffused P lanar Silicon T ransistor Switching Regulator Applications F e a tu re s • High breakdow n voltage, high reliability • F ast sw itching speed •Wide ASO • Adoption of MBIT process ■Micaless package facilitating m ounting

2SA1693

Abstract: 2SC4466
Contextual Info: Inchange Semiconductor Product Specification 2SC4466 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1693 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the

2SC4468

Abstract: 2SA1695
Contextual Info: SavantIC Semiconductor Product Specification 2SC4468 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1695 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC4460

Abstract: 2SC4460 Equivalent 2sc4460 datasheet
Contextual Info: SavantIC Semiconductor Product Specification 2SC4460 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

2SA1694

Abstract: 2SC4467
Contextual Info: SavantIC Semiconductor Product Specification 2SA1694 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC4467 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC4463

Abstract: DSA003724
Contextual Info: 2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4463 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO

transistor 2SA1694

Abstract: 2SA1694 2SC4467 transistor 2SC4467
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1694 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4467 APPLICATIONS ·Designed for audio and general purpose applications

2SC4467

Abstract: 2SA1694/2SC4467
Contextual Info: 2SC4467 Pb Free Plating Product Pb 2SC4467 Silicon NPN Triple Diffused Planar Transistor 2SC4467 Silicon NPN Power Transistors DESCRIPTION •With TO-3PI package ·Complement to type 2SA1694 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION

2SC4467

Abstract: transistor 2SC4467 2SA1694
Contextual Info: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A

Hitachi DSA002755

Contextual Info: 2SC4462 Silicon NPN Epitaxial Application UHF frequency converter Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4 V Collector current

Hitachi DSA002755

Contextual Info: 2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline 2SC4463 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current

2SC4463

Contextual Info: 2SC4463 Silicon NPN Epitaxial UHF Frequency Converter Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit ——————————————————————– Collector to base voltage VCBO 30 V ——————————————————————–

2SC4467

Abstract: 2SA1694 2sa1694 2sc4467 DSA0016509
Contextual Info: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A

Contextual Info: 2SC4461L Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)25 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

transistor 2sc4460

Abstract: 2SC4460
Contextual Info: Ordering number: EN 3331 2SC4460 No.3331 NPN Triple Diffused P lanar Silicon T ransistor I sm i Y o Switching Regulator Applications F e a tu r e s • High breakdow n voltage, high reliability • F a st sw itching speed •Wide ASO • Adoption of MBIT process

2SC4467

Abstract: 2SA1694 2SC4467 2SA1694 2SC446
Contextual Info: Inchange Semiconductor Product Specification 2SC4467 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1694 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SA1295 2SC3264

Abstract: 2SA1694 2SC4467 2SA1186 2SC2837 MT100 2sa1492 2sc3856 T03PF transistor 2sa1494 2SB1560 2SD2493 transistor 2sb1624 2sd2493
Contextual Info: 2-1. Power Transistors Transistors for Audio Amplifier Single emitter Type No. PC W 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO (V) IC (A) hFE (min) fT (MH Z) Package FM20 (T0220F) MT-25 (T0220) 80 6 2SA1693/2SC4466 MT-100 (T03P) 60 2SA1907/2SC5099 FM100 (T03PF)

TRANSISTOR C 4460

Abstract: transistor 2SC4460 M S0217 si 4460 transistor 2sc4460 2SC4460 286u transistor 500v
Contextual Info: I O rdering n u m b e r:EN 3331 2SC4460 N PN Triple Diffused Planar Silicon Transistor SA0YO i 500V/15A Switching Regulator Applications F e a tu r e s • H igh breakdow n voltage, high reliability • F a st sw itching speed -W ideA SO • Adoption of MBIT process

2sc4460

Abstract: 100751
Contextual Info: 2SC4460M-SV Ordering number : EN7692A SANYO Semiconductors DATA SHEET 2SC4460M-SV NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • • High breakdown voltage, High reliability. High-speed switching. Wide ASO.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base

2SC4466

Abstract: 2SA1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ

2SC4466

Abstract: 2SA1693
Contextual Info: 2SA1693 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4466 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –1.5max V 60(Tc=25°C) W

Contextual Info: 2SC4462 Silicon NPN Epitaxial HITACHI Application U H F frequency converter Outline C M PA K ^ 1. Emitter "2 2 - Base 3. Collector 603 2SC4462 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^C B O 30 V Collector to emitter voltage