CPD93V Search Results

Contextual Info: PROCESS CPD93V Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12.8 x 12.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 10,000Å

CPD93V

Abstract: CMPD4150
Contextual Info: PROCESS CPD93V Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12.8 x 12.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.1 x 5.1 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As/Au - 10,000Å

1n4148 die chip

Abstract: 1N4150 DIE 1N4148 chip 1n4148 die WN diode CPD41-1N4150-CT DIE CHIP 51 BAS56 CPD41 CPD93V
Contextual Info: PCN # 109 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD41, High Current Switching Diode discrete semiconductors, wafers, and die in chip

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24