potentiometer 502 TJ
Abstract: BLF276 mra843
Contextual Info: Philips Semiconductors 00300GÔ □□□ I A P X eliminary specification BLF276 VHF power MOS transistor N AMER PHILIPS/DISCRETE LIE J> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement
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ot119pinning-sot119d3blf276vbb07s-2+4mba379mra936potentiometer 502 tjmra843
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SOT123 Package
Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the
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sc08ablv10ot123bly87c/01+11scd45sot123 packagesot123sot-123bfs22asot121 packagebfq43bfq43 datasheetbly93blx15bfq34 application note
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SOT262
Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Contextual Info: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348
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blf346blf348ot-119ot-262+14blf276blf278blf248blf368blf378ot-119d3sot262power amplifier blf278bgy47321 sotbgy145sot183bgy43sot246
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MRA936
Abstract: BLF276 sot119d sot119d3 TRANSISTOR 0835
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF276 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability
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blf276mbb072msa308ot119+4mra936sot119dsot119d3transistor 0835
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sot123 package
Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Contextual Info: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ
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Contextual Info: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121
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