BFW11
Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
Contextual Info: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to
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711002b00b7bb4bfw10bfw11+118fw10711002tq0b7b73bfw10 equivalentbfw10 transistorbfw11 equivalentbfw10 in drain resistance1z62bfw118electromedical7z08
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bfw10 equivalent
Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015
Contextual Info: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential
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bfw10bfw11bfw10 equivalentbfw10 in drain resistance+4transistors bfw10bfw11 equivalent400mc15-015
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BFW11
Abstract: bfw11 equivalent BFW10 in drain resistance
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential
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bfw10bfw11bb53t31dq3s77b+2bfw11 equivalentbfw10 in drain resistance
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BFW10
Abstract: BFW11 bfw10 equivalent BFW10 in drain resistance bfw11 equivalent
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed fo r broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable fo r differential
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bfw10bfw11v0s-15vbfw10 equivalent+2bfw10 in drain resistancebfw11 equivalent
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BFW10 JFET
Contextual Info: BFW10 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)20m I(G) Max. (A)10m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(GSS) Max. (A).1u @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)20m
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BSV81
Abstract: j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION
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2n40912n40922n40932n4391+162n43922n43932n44162n4416a2n48562n4857bsv81j310 replacementbfw11j310 equivalentbsd211bsv80bsd215bfw10bfw10 transistorj310
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7.1 Channel audio amplifier
Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_
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bfw13bfw12bfw11bfw10+15bf245abf245bbf245cbf256abf256bbf545a7.1 channel audio amplifieramplifieraudiobft46bf861an channel audiobf410cbf512transistors bfw10
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j310 replacement
Abstract: BSD211 BFW12 BFW10 BSV79 bf245a-c BF246C 2N4092 2n4393 replacement bfw11
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION
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2n40912n40922n40932n4391+152n43922n43932n44162n4416a2n48562n4857j310 replacementbsd211bfw12bfw10bsv79bf245a-cbf246c2n4393 replacementbfw11
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bfw11 jfet
Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
Contextual Info: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72
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2n48592n48602n4861bf245a/0+16bf245abf245bbf245cbf247abf247bbf247cbfw11 jfetjfet bfw10field effect transistorsbfw12bfw10 jfetbf256bbf964sbf96bf964bf960
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BF247A
Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150
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bs170bs208bf904bf904r+14bf904wrbs250bc264dbf908bsd12bf245abf247abs250 bs170pmbfj111pmbfj174bsr56bft46phc21025bf909wr
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59VIII
Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
Contextual Info: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at
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bcy57bcy58viibcy58viii59viii+12100min78vii78viiibcy79vii79viiibfw1079-ixbcy 68bcy58xbcy 6259viibharat elek
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BFW12
Abstract: bc264c BFT46
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR AMPLIFIERS rating type number characteristics ± V DS max. ’d ss Ciss typ. c rss l v f s l 1 pF) typ.
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pmbfj308pmbfj309pmbfj310pmbf4416+7pmbf4416apmbf5484pmbf5485pmbf5486bfw12bc264cbft46
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FET BFW11
Abstract: FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET
Contextual Info: 48 RF/Microwave Devices Small-Signal Field-Effect Transistors Junction FET's These are fo r applications in the VHF range. Principal features of these products are their low noise, high transfer conductance and their high input impedance, the latter, in particular, m inim izing signal losses and helping to sim plify
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bf245a/0bf245abf245bbf245c+16bf247abf247bbf247cbf256abf256bbf256cfet bfw11fet bfw10of fet bfw11bfw10 fetof fet bfw10bfw12bf245a sot23bfw10 n-channelfet bf245aj310 fet
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F245B
Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten
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philips bsd215
Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment
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bc264abc264bbc264cbc264d+9bf245abst120bst122php112php125phc2102501philips bsd215bst110bf909wr
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11
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triac LT 5220
Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
Contextual Info: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)
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041p9cro-45o-92/1/2/3o-92/5+12o-106o-220triac lt 5220bf247bd130by103lif 41172n30202n2405bu2082n79232n5716
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E421 fet
Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.
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o-72po-92xo-105o-106+11o-106pe421 fetequivalent transistor e176j2n2608j2n3821e112 jfete420 dual jfet2n390g transistore421 dual jfet2n4360 equivalent transistorsteledyne semiconductor jfet
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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ac187bc157bc158bc159+16bc186bc187bd201bd202bd203bd204tca160by164mullard c296taa310ataa435taa700tba550tba480pcc88taa300
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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