BFW11 Search Results

pin configuration BFW 11

Contextual Info: Maximum Ratings DEVICE VDS V V GSR Electrical characteristics(Ta=25°C, unless otherwise specified) PD (W) ^G SS (V) mm e ia m ^ g s <oH) (V) max VDs & 'd (nA) (V) *g s s ® (nA) max mm (A) mm (A) mm BFW 10 30 30 30 0.3 30 10 8 15 0.5 0.1 BFW11 30 30 30

bfw10 equivalent

Abstract: BFW10 BFW10 in drain resistance transistors BFW10 BFW11 bfw11 equivalent 400M C15-015
Contextual Info: BFW10 BFW11 N-CHANNËL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO -72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

BFW10 JFET

Abstract: bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit BFW11 MOTOROLA SYMBOL BFW10
Contextual Info: MOTOROLA 6367254 SC-CXSTRS/R MOTOROLA DËjjb3b72SM DOûSbaS F> SC CXSTRS/R D 96D 8 2 6 2 5 F BFW10 BFW11 CASE 20-03, STYLE 1 TO-72 TO-2Q6A) 3 G ate M A X IM U M RATINGS Sym bol R a tin g V a lu e Drain V U n it D ra in -S o u rc e V olta g e VDS 30 Vdc

BFW11

Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
Contextual Info: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to

bfw11 jfet

Abstract: BFW10 bfw11 BFW10 JFET jfet bfw10
Contextual Info: This Material I ru ÜJ Dl ÜJ Copyrighted LÜ J -C □ a a ru By fcH LU D- Its □a Respective 1 TO-72 N Channel JFET Manufacturer Maximum Rating« $ DEVICE Vos V min BFW10 BFW11 VDG VGSR (A) (A) nun mm Po (W) Electrical Characteristic v « . I q v as(off) o V ds & lD

BF 331 TRANSISTORS

Abstract: bfw10 BFW11 bfw10 equivalent bfw10 transistor BFW10 in drain resistance BFW118 BFW10 n-channel sis 648 data 0G35772
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS S y m m e tr ic a l n -c h a n n e l s ilic o n p la n a r e p ita x ia l j u n c t io n fie ld - e ffe c t tra n s is to rs in T O - 7 2 m e ta l e n v elo p e s w it h th e s h ie ld lead c o n n e c te d to th e case. T h e tra n s is to rs are desig ned fo r b ro a d b a n d a m p lifie r s 0 t o

BFW10 JFET

Abstract: bfw 11 bfw11 bfw10 equivalent bfw 10 JFET BFW 11 bfw 96 bfw11 jfet BFW118
Contextual Info: MOTOROLA 6367254 SC-CXSTRS/R M OT O RO L A DF|b3L.7254 F> SC CXSTRS/R 96D 8 2 6 2 5 F OOûSbaS D T - 3/-3-5" BFW10 BFW11 C A SE 20-03, STYLE 1 TO-72 TO-2Q6A) M A X IM U M R A T IN G S Sym bol R a tin g V a lue D rain -So u rc e Voltage VDS 30 Vdc Drain-Gate Voltage

BFW11

Abstract: bfw11 equivalent BFW10 in drain resistance
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

Contextual Info: BFW11 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)20m I(G) Max. (A)10m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)10m

BFW10 JFET

Abstract: BFW10 bfw11 jfet bfw11 jfet bfw10 bfw10 equivalent BFW11 circuit SYMBOL BFW10 BFW11 MOTOROLA EQUIVALENT OF bfw10
Contextual Info: MOTOROLA SC 6367254 - CXS TRS/ R F> MOTOROLA SC It. DE | b 3 L .7 2 S 4 9 6D 8 2 6 2 5 < X S T R S / R F> T~ QOflabaS D 3/ - T 'S ' BFWIO BFW11 CASE 20-03, STYLE 1 TO-72 TO-206A M A X IM U M RATINGS Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage

BFW10

Abstract: BFW11 bfw10 equivalent BFW10 in drain resistance bfw11 equivalent
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed fo r broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable fo r differential

BFW10 JFET

Abstract: jfet bfw10 BFW10 BFW11 bfw11 jfet
Contextual Info: BiT ET20DDD hbEEBEc! I I TO-72 N Channel JFET Maximum Ratings DEVICE BFW10 BFW11 V os V VD<3 Vq s r (A) (A) iron min mm 30 30 30 30 30 30 Po (W ) Electrical Characteristic v«. •'a (V) (pA) min .3 .3 30 30 v QS(off) a (V ) V os & (V ) lD (nA) max lo ss •

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

59VIII

Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
Contextual Info: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

F245B

Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.