SIA430DJ Search Results
SIA430DJ Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| SIA430DJ-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 12A SC70-6 | Original | 9 | |||
| SIA430DJ-T4-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V SC-70-6 | Original | 191.87KB | |||
| SIA430DJT-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12A PPAK SC70-6 | Original | 237.74KB | 8 | ||
| SIA430DJT-T4-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 12A SC-70-6 | Original | 237.13KB |
SIA430DJ Price and Stock
Vishay Intertechnologies SIA430DJT-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 12A; Idm: 40A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA430DJT-T1-GE3 | 3,000 |
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SIA430DJT-T1-GE3 | Tape & Reel | 21,000 | 8 Weeks | 3,000 |
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SIA430DJT-T1-GE3 | 13,923 |
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SIA430DJT-T1-GE3 | Tape & Reel | 2,922 | 100 |
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| SIA430DJT-T1-GE3 | Cut Tape | 2,922 | 1 |
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| SIA430DJT-T1-GE3 | Tape & Reel | 6,000 |
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SIA430DJT-T1-GE3 | Reel | 6,000 |
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SIA430DJT-T1-GE3 | 15 Weeks | 3,000 |
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Vishay Intertechnologies SIA430DJT-T4-GE3N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA430DJT-T4-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA430DJT-T4-GE3 | Tape & Reel | 6,000 |
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SIA430DJT-T4-GE3 |
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SIA430DJT-T4-GE3 | Reel | 6,000 |
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Vishay Intertechnologies SIA430DJ-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA430DJ-T1-GE3 | 204 |
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SIA430DJ-T1-GE3 | 13,479 |
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Vishay Huntington SIA430DJT-T1-GE3MOSFET N-CH 20V 12A PPAK SC70-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA430DJT-T1-GE3 | 33,000 |
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Buy Now | |||||||
SIA430DJ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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s8208Contextual Info: SPICE Device Model SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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sia430dj18-jul-08s8208 | |
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Contextual Info: SPICE Device Model SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sia430djt2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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sia430djsc-70sc-70-6l-singlesia430dj-t1-ge3+1 | |
SiA430DJ-T1-GE3Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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sia430djsc-70sc-70-6l-singlesia430dj-t1-ge3+1 | |
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Contextual Info: SiA430DJ Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package RoHS COMPLIANT |
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sia430djsc-70sc-70-6l-singlesia430dj-t1-ge3+4 | |
SiA430DJ-T1-GE3
Abstract: S8117
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sia430djsc-70sc-70-6l-singlesia430dj-t1-ge3+2 | |
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Contextual Info: New Product SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b, c 0.0135 at VGS = 10 V 12a 0.0185 at VGS = 4.5 V 10.8 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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sia430djsc-70sc-70-6l-singlesia430dj-t1-ge3+3 | |
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Contextual Info: SPICE Device Model SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
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sia430djs-82083-rev08-sep-08 | |
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Contextual Info: SiA430DJT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sia430djtan6090628u4466u+6 | |
SIA430DJContextual Info: SPICE Device Model SiA430DJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sia430dj2002/95/ec2011/65/eujs709a+1 | |
circuit 4466
Abstract: AN609
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sia430djan60915-may-08circuit 4466 | |
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Contextual Info: SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) b, c 0.0135 at VGS = 10 V 12 a 0.0185 at VGS = 4.5 V 10.8 • TrenchFET power MOSFET Qg (Typ.) • Thermally enhanced PowerPAK® SC-70 package |
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sia430djtsc-70sc-70-6l2002/95/ec+3 | |
NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
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aon2240aon2401aon2405aon2406+14 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
ADP2323
Abstract: FDS8880 CDRH105RNP-1R5N M200 M400 ADP2323-EVALZ SW111
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adp2323mo-220-whhd12408-a32-lead+8 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance: |
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sc-70sia519edjcom/mosfets/powerpak-sc-70-package/vmn-pt0131-1402 | |
ADP2323
Abstract: 4.7uF 110V X7R fds8880
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adp2323mo-220-whhd32-leadcp-32-7+5 | |
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Contextual Info: FEATURES Input voltage: 4.5 V to 20 V Integrated 44 mΩ high-side MOSFET 0.6 V ± 1% reference voltage over temperature Continuous output current: 6 A Programmable switching frequency: 250 kHz to 1.4 MHz Synchronizes to external clock: 250 kHz to 1.4 MHz |
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grm32er60j107me20grm32er60j476me20 | |
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Contextual Info: Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET ADP2323 Data Sheet TYPICAL APPLICATION CIRCUIT FEATURES GENERAL DESCRIPTION The ADP2323 is a full featured, dual output, step-down dc-todc regulator based on current-mode architecture. The ADP2323 |
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adp2323mo-220-whhd12408-a32-lead+3 | |
72-2 4r7m
Abstract: ADP2325 FDS8880 AON7402 SI4804C SiA430DJ
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adp2325mo-220-whhd32-leadcp-32-7+9 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
6TPF470M
Abstract: 3 phase AC voltage regulator for 440v FDVE1040
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adp2380mo-153-abt16-leadre-16-3+6 | |