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    S8208 Search Results

    S8208 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TPS82085SILT
    Texas Instruments 3A, High-Efficiency Step-Down Converter Module with Integrated Inductor 8-uSiP -40 to 125 Visit Texas Instruments Buy
    TPS82084SILR
    Texas Instruments 2-A, High-Efficiency Step-Down Converter Module with Integrated Inductor 8-uSiP -40 to 125 Visit Texas Instruments Buy
    TPS82084SILT
    Texas Instruments 2-A, High-Efficiency Step-Down Converter Module with Integrated Inductor 8-uSiP -40 to 125 Visit Texas Instruments Buy
    TPS82085SILR
    Texas Instruments 3A, High-Efficiency Step-Down Converter Module with Integrated Inductor 8-uSiP -40 to 125 Visit Texas Instruments Buy
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    S8208 Price and Stock

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    POWELL ELECTRONICS 202C653-71-0-CS8208

    HEATSHRINK BOOT SZ53 BLACK
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    DigiKey 202C653-71-0-CS8208 Bulk 26 10
    • 1 -
    • 10 $93.01
    • 100 $91.15
    • 1000 $85.79
    • 10000 $85.79
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    Texas Instruments TPS82084EVM-672

    EVAL BOARD FOR TPS82084
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    DigiKey TPS82084EVM-672 Box 1 1
    • 1 $67.38
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    Mouser Electronics TPS82084EVM-672 1
    • 1 $66.42
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    Texas Instruments TPS82085EVM-672

    EVAL BOARD FOR TPS82085
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    DigiKey TPS82085EVM-672 Box 1 1
    • 1 $67.38
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    Mouser Electronics TPS82085EVM-672 2
    • 1 $67.00
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    Schneider Electric VW3S8208R05

    P/D TO TLM2 CONNECTOR CABLE 0,5
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    DigiKey VW3S8208R05 Bulk 1
    • 1 $399.30
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    Mouser Electronics VW3S8208R05
    • 1 $413.42
    • 10 $412.59
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    Schneider Electric VW3S8208R50

    P/D TO TLM2 CONNECTOR CABLE 5M
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    DigiKey VW3S8208R50 Bulk 1
    • 1 $998.19
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    Mouser Electronics VW3S8208R50
    • 1 $1027.52
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    S8208 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    s8208

    Abstract: TPCS8208
    Contextual Info: S8208 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII S8208 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 13 mΩ (標準)


    Original
    TPCS8208 s8208 TPCS8208 PDF

    SI9926CD

    Abstract: Si9926CDY
    Contextual Info: SPICE Device Model Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    Si9926CDY 18-Jul-08 SI9926CD PDF

    s8208

    Contextual Info: SPICE Device Model SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiA430DJ 18-Jul-08 s8208 PDF

    s8208

    Abstract: TPCS8208
    Contextual Info: S8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original
    TPCS8208 s8208 TPCS8208 PDF

    s8208

    Contextual Info: SPICE Device Model SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiA426DJ 18-Jul-08 s8208 PDF

    TPCS8208

    Abstract: S8208
    Contextual Info: S8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8208 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original
    TPCS8208 TPCS8208 S8208 PDF

    Contextual Info: SPICE Device Model SiA430DJ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiA430DJ S-82083-Rev. 08-Sep-08 PDF

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original
    9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 PDF

    s8208

    Contextual Info: S8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original
    TPCS8208 s8208 PDF

    s8208

    Abstract: TPCS8208
    Contextual Info: S8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original
    TPCS8208 s8208 TPCS8208 PDF

    Si9926CDY

    Abstract: 64140
    Contextual Info: SPICE Device Model Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    Si9926CDY S-82081-Rev. 08-Sep-08 64140 PDF

    S-82082

    Contextual Info: SPICE Device Model SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    SiA426DJ S-82082 08-Sep-08 PDF

    s8208

    Abstract: Si9407BDY S-8208
    Contextual Info: SPICE Device Model Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    Si9407BDY 18-Jul-08 s8208 S-8208 PDF

    Si9407BDY

    Contextual Info: SPICE Device Model Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    Si9407BDY S-82080-Rev. 08-Sep-08 PDF