SIA427DJ Search Results
SIA427DJ Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIA427DJ-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 12A SC-70-6 | Original | 9 |
SIA427DJ Price and Stock
Vishay Intertechnologies SIA427DJ-T1-GE3Transistor: P-MOSFET; unipolar; -8V; -12A; 19W; PowerPAK® SC70 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA427DJ-T1-GE3 | 3,000 |
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SIA427DJ-T1-GE3 | Tape & Reel | 19 Weeks | 3,000 |
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SIA427DJ-T1-GE3 |
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SIA427DJ-T1-GE3 | Reel | 3,000 |
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SIA427DJ-T1-GE3 | 27 Weeks | 3,000 |
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Vishay Huntington SIA427DJ-T1-GE3Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R / MOSFET P-CH 8V 12A SC-70-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA427DJ-T1-GE3 | 3,523 |
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Buy Now | |||||||
SIA427DJ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SiA427DJ
Abstract: SiA427DJ-T1-GE3 SIA427DJ-T1
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sia427djsc-70sc-70-6l-single2011/65/eu+4 | |
SiA427DJContextual Info: SPICE Device Model SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sia427dj18-jul-08 | |
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Contextual Info: SiA427DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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sia427djan60918-jun-10 | |
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Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V |
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sia427djsc-70-6l-singlesc-702002/95/ec+3 | |
A 1469 mosfet
Abstract: SIA427DJ SiA427DJ-T1-GE3 SIA427DJ-T1
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sia427djsc-70-6l-singlesc-702002/lectual+4 | |
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Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V |
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sia427djsc-70-6l-singlesc-702011/65/eu+2 | |
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Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12 a 0.095 at VGS = - 1.2 V |
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sia427djsc-70-6l-singlesc-702002/95/ec+1 | |
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Contextual Info: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12 a 0.095 at VGS = - 1.2 V |
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sia427djsc-70-6l-singlesc-702002/95/ec+2 | |
NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
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aon2240aon2401aon2405aon2406+14 | |
SiA427DJ
Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
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sc-70com/mosfets/powerpak-sc-70-package/vmn-pt0131-1209sia427dj+6 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
SiB914
Abstract: SiA427DJ si2329ds si8802
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sc-70sc-75com/mosfets/12-rated-on-res/com/mosfets/15-rated-on-res/+5 |