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SIA425EDJ Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIA425EDJ-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A SC-70-6	Original	PDF		7

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Vishay Intertechnologies


Vishay Intertechnologies SIA425EDJ-T1-GE3 Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIA425EDJ-T1-GE3		2,284		1	1 $0.75 10 $0.75 100 $0.28 1000 $0.20 10000 $0.20	Buy Now
Quest Components ()	SIA425EDJ-T1-GE3		1,827			1 $1.20 10 $1.20 100 $1.20 1000 $0.48 10000 $0.42	Buy Now
	SIA425EDJ-T1-GE3		1,827			1 $1.00 10 $1.00 100 $1.00 1000 $0.26 10000 $0.26	Buy Now

SIA425EDJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiA425EDJ Abstract: bmx - 01 SiA425EDJ-T1-GE3 Contextual Info: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21	Original	sia425edj sc-70 2002/95/ec sc-70-6l-single +318-jul-08 bmx - 01 sia425edj-t1-ge3	PDF
Contextual Info: SPICE Device Model SiA425EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sia425edj 18-jul-08	PDF
9934 Abstract: AN609 Contextual Info: SiA425EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sia425edj an609 10-nov-09 9934	PDF
Contextual Info: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21	Original	sia425edj sc-70 2002/95/ec 18-jul-08	PDF
NX3008 Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N Contextual Info: Advanced cross reference list DFN* MOSFETs DFN: discrete flat no-leads in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1	Original	aon2240 aon2401 aon2405 aon2406 +14aon2407 aon2408 aon2409 aon2410 aon2420 aon2701 nx3008 irlhs6242 sia431dj ssm6j503nu irlhs2242 dmn3730ufb4 fdma1028nz fdma3028n	PDF
SiA427DJ Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	sc-70 com/mosfets/powerpak-sc-70-package/vmn-pt0131-1209 sia427dj +6sia450dj sia447dj sia413dj sia413 sia445edj sia915dj	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF