IRFE9130 Search Results

Contextual Info: PD - 91716B IRFE9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U [REF:MIL-PRF-19500/564] 100V, P-CHANNEL Product Summary Part Number IRFE9130 BVDSS -100V RDS on 0.30Ω ID -6.5A The leadless chip carrier (LCC) package represents the

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

IRFE9130

Contextual Info: IRFE9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045)

Contextual Info: P-CHANNEL POWER MOSFET IRFE9130 • Hermetically Sealed, Light Weight, Small Footprint Surface Mount Package Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Screening Options Available • • • • ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated

IRFE9130

Abstract: JANTX2N6849U JANTXV2N6849U LCC-18 65ADI
Contextual Info: PD - 91716B IRFE9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U [REF:MIL-PRF-19500/564] 100V, P-CHANNEL Product Summary Part Number IRFE9130 BVDSS -100V RDS on 0.30Ω ID -6.5A The leadless chip carrier (LCC) package represents the

Contextual Info: P-CHANNEL POWER MOSFET IRFE9130 • Hermetically Sealed, Light Weight, Small Footprint Surface Mount Package Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Screening Options Available • • • • ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated

irf P-Channel MOSFET audio

Abstract: 2N6849U 2N6849 JANS 2N6849 IRFE9130 JANS2N6849U JANTX2N6849U JANTXV2N6849U 2n6849 mosfet
Contextual Info: Provisional Data Sheet No. PD - 9.1716 IRFE9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:MIL-PRF-19500/564] Ω , HEXFET -100Volt, 0.30Ω The leadless chip carrier LCC package represents the logical next step in the continual evolution of

Contextual Info: lili Étti INI 5EME IRFE9130 LAB MECHANICAL DATA Dim ensions in mm inches P_PH A M M FI r —O r 1 A I \ l l \ l t l _ POWER MOSFET 9 .1 4 (0 .360) VDSS -100V -6.1 A 0.345Q ^D(cont) ^D S (on) FEATURES • SURFACE MOUNT • SMALL FOOTPRINT LCC4 • HERMETICALLY SEALED

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

Contextual Info: Provisional Data Sheet No. PD - 9.1716 In t e r n a t io n a l IOR Rectifier ir f e 913o dv/dt RATED JANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:MIL-PRF-19500/564] R EPETITIVE AVALANCHE AND -100Volt,0.30Q , HEXFET T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

n10 smd

Contextual Info: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

Contextual Info: TOR IRFE Series Devices IRFE Series Data Sheet The IRFE Data Sheet describes 19 devices, 12 N-Channel and 7 P-Channel, all contained in the LCC package. This data sheet is arranged to show common tabular and graphical information between devices. alphabetical order. W here the information is device

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

Contextual Info: IOR IRFE Series Devices IRFE Series Data Sheet alph abetical order. W h e re the inform ation is device specific, w e have assigned a num eric c h a ra c te r for th e graph typ e and an a lp h a c h a ra c te r to a given d ev ic e . S e e T a b le A b elo w . W h e re graphs are