80N60AU1 Search Results

diode lt 429

Abstract: 7V03 lts 542
Contextual Info: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A

dc servo igbt

Contextual Info: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES

Contextual Info: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous

Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient

80N60AU1

Abstract: IXYS IGBT
Contextual Info: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings

80n60

Abstract: IXSN80N60AU1
Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

b1113

Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Contextual Info: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2

BTS 3900 a

Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

1xys

Abstract: E153432 80N60A 80n60
Contextual Info: High Current IGBT 600 V 160 A 3V IXSN 80N60A YCES IC25 VCE sat Short Circuit SO A Capability Preliminary Data Symbol Test Conditions v CES v CGR Tj = 25°C to 150°C 600 V 1, = 25°C to 150°C; RGE = 1 M n 600 A Maximum Ratings v GES v GEM Continuous ±20