69A DIODE Search Results

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

CEP75A3

Contextual Info: CEP75A3/CEB75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS ON = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

D1314

Abstract: SN75361 207B SN75107A SN75107B SN75207 SN75207B SN55109A
Contextual Info: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS S LLS Q 69A - D1314, JULY 1973 - REVISED JANUARY 1993 □ O R N PACKAGE TO P V IE W Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics

IXTQ69N30P

Abstract: IXTT69N30P
Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300

Contextual Info: I i H AMER .PHILIPS/DISCRETE SSE D • bbS3T31 0050Q13 T ■ BDX69; 69A BDX69B; 69C T -s s -a ? DARLINGTON POWER TRANSISTORS N-P-N Darlingtons for audio output stages and general amplifier and switching applications, n TO-3' envelope. P-N-P complements are BDX68, BDX68A, BDX68B and BDX68C.

s69a

Abstract: IXTQ69N30P IXTT69N30P TO-3P
Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300

Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300

BDX69

Abstract: z664 BDX68 BDX68A BDX68B BDX68C BDX69A BDX69B BDX69C T3329
Contextual Info: JL il N AMER .PHILIPS/DISCRETE 2SE D • IJl bbS3T31 - ^ uuc 0020013 . T ■ BDX69; 69A BDX69B; 69C T - 3 3 - Ä 7 DARLINGTON POWER TRANSISTORS N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BDX68, BDX68A, BDX68B and BDX68C.

E4362A

Abstract: LED Solar Simulator Information and list of solar panels modules solar panels in satellites E4367A E4360 14360A E4361A E4368A E4360A
Contextual Info: Agilent E4360 Modular Solar Array Simulators Models: E4360-62A, E4367-69A Datasheet • Accurate simulation of any type of solar array • Small size: up to 2 outputs in 2U of rack space • High output power – up to 600 W per output • Fast I-V curve change and fast recovery switching time

upd4066

Abstract: uPD4069 cs1m UPD75P036 imo inverter cd 750 P7073 RA75X UPD75208CW US5A13RA75X uPD75028
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT //PD75028 A 4 - B IT S IN G L E -C H IP M IC R O C O M P U T E R The inform ation in this document is subject to change w ith o u t notice. Document No. (0. D. No. IC—3168A IC—86 69A) Date Published February 1993 P Printed in Japan

BDX69

Abstract: transistor handbook BDX68 BDX68A BDX68C BDX69B
Contextual Info: ¡A-ISp 2 .5 8 BDX69; 69A BDX69B; 69C JV DARLINGTON POWER T R A N SIST O R S N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BD X68, 8D X6 8A , BD X 6 8 8 and BD X 68 C . Q U IC K R E F E R E N C E D A T A

upd4069

Abstract: upd4066 imo inverter cd 750 invertor UPD75208CW US5A13RA75X uPD75028 uPD75028CW UPD75028GC UPD75P036
Contextual Info: DATA SHEET M O S INTEGRATED C IR C U IT /¿PD75028 A 4-BIT S I N G L E - C H IP M I C R O C O M P U T E R T h e in fo rm a tio n in this d o cum e nt is subject to change w ith o u t notice. Document No. (0. D. No. IC—3168A IC—86 69A) Date Published February 1993 P

63d54

Abstract: 1e23
Contextual Info: Datas h eet 1 2333 4 4 567 8 9 69A B C D A 6E B F 69D F  B  D  68 A A  A 69 DF D  FB   3 6DDA69DABFB  6D6DFAD 12;2<+B9#368* D6D7%3AD !" %  

diode 300v

Abstract: IXFH69N30P IXFT69N30P
Contextual Info: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

FDA69N25

Contextual Info: TM UniFET FDA69N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

1E14

Abstract: 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GY 64R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

Contextual Info: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

ISD 1720

Abstract: ON5040 FDA69N50
Contextual Info: FDA69N25 N-Channel UniFETTM MOSFET 250 V, 69 A, 41 m Features Description • RDS on = 41 m (Max.) @ VGS = 10 V, ID = 34.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDAF69N25

Contextual Info: UniFET TM FDAF69N25 250V N-Channel MOSFET Features Description • 34A, 250V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)

1N295

Abstract: 1N294 1N90 ln297 1N135 1n69 1N75 1N128 in67a 1N67
Contextual Info: CRIMSON SEM IC ONDUC TO R INC Ti 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 0 0 3 5 0 D DE | S S m D ^ b T'Ot'Ol GERMANIUM DIODE TYPE PE A K REVERSE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW ARD CURRENT A T 1 V O LT

Contextual Info: RoHS 6 Compliant Type RJS Telecom - Power Cross Protection & Ballast Protection RJS May2012D Pb RJS Series, Telecom - Power Cross Protection & Ballast Protection Fuse Description RJS Fuses are primarily intended for use in telecommunication circuit applications requiring low current

smd diode marking 69a

Abstract: DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120
Contextual Info: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.3 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated

Contextual Info: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTQ69N30PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ

2N06L06

Abstract: smd diode marking 69a smd marking code G16 Q67060S60
Contextual Info: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 55 R DS on 6.3 m
ID 80 A P- TO263 -3-2
175°C operating temperature V P- TO220 -3-1
Avalanche rated
dv/dt rated Type SPP80N06S2L-06