Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFT69N30P Search Results

    IXFT69N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFT69N30P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 69A TO-268 Original PDF 5
    SF Impression Pixel

    IXFT69N30P Price and Stock

    Select Manufacturer

    IXYS Corporation IXFT69N30P

    MOSFET N-CH 300V 69A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT69N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.05
    • 10000 $8.05
    		Buy Now
    Mouser Electronics IXFT69N30P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.76
    • 10000 $8.76
    		Get Quote
    TTI IXFT69N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.05
    • 10000 $8.05
    		Buy Now
    TME IXFT69N30P 1
    • 1 $13.76
    • 10 $11.01
    • 100 $9.89
    • 1000 $9.89
    • 10000 $9.89
    		Get Quote
    New Advantage Corporation IXFT69N30P 24 1
    • 1 -
    • 10 -
    • 100 $22.26
    • 1000 $22.26
    • 10000 $22.26
    		Buy Now

    Littelfuse Inc IXFT69N30P

    Discmosfetn-Ch Hiperfet-Polar To-268Aa/ Tube |Littelfuse IXFT69N30P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFT69N30P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.44
    • 10000 $8.44
    		Buy Now

    IXFT69N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode 300v

    Abstract: IXFH69N30P IXFT69N30P
    Contextual Info: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A diode 300v IXFH69N30P IXFT69N30P PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A PDF