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    IXFT69N30P Search Results

    IXFT69N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFT69N30P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 69A TO-268 Original PDF 5
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    IXFT69N30P Price and Stock

    IXYS Corporation

    IXYS Corporation IXFT69N30P

    MOSFETs 69 Amps 300V 0.049 Rds
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    IXFT69N30P Datasheets Context Search

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    diode 300v

    Abstract: IXFH69N30P IXFT69N30P
    Contextual Info: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A diode 300v IXFH69N30P IXFT69N30P PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A PDF