Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFH69N30P Search Results

    IXFH69N30P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH69N30P
    		IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF 617.95KB 5
    SF Impression Pixel

    IXFH69N30P Price and Stock

    Select Manufacturer

    IXYS Corporation IXFH69N30P

    MOSFETs 69 Amps 300V 0.049 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH69N30P 155
    • 1 $12.98
    • 10 $7.86
    • 100 $7.86
    • 1000 $6.47
    • 10000 $6.47
    		Buy Now
    Future Electronics IXFH69N30P Tube 300
    • 1 -
    • 10 -
    • 100 $8.80
    • 1000 $8.64
    • 10000 $8.64
    		Buy Now
    TME IXFH69N30P 1
    • 1 $12.25
    • 10 $12.25
    • 100 $8.24
    • 1000 $7.77
    • 10000 $7.77
    		Get Quote

    Littelfuse Inc IXFH69N30P

    DiscMosfetN-CH HiPerFET-Polar TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IXFH69N30P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $9.52
    • 1000 $9.22
    • 10000 $9.22
    		Get Quote
    Onlinecomponents.com IXFH69N30P
    • 1 -
    • 10 -
    • 100 $13.47
    • 1000 $6.43
    • 10000 $6.43
    		Buy Now

    IXFH69N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode 300v

    Abstract: IXFH69N30P IXFT69N30P
    Contextual Info: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A diode 300v IXFH69N30P IXFT69N30P PDF

    DS99220

    Abstract: IXFH69N30P IXFK69N30P
    Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH69N30P IXFK69N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous


    Original     		IXFH69N30P IXFK69N30P 69N30P DS99220 IXFH69N30P IXFK69N30P PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF