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IXFH69N30P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH69N30P		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	617.95KB	5

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IXYS Corporation IXFH69N30P MOSFETs 69 Amps 300V 0.049 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH69N30P		129			1 $15.48 10 $8.74 100 $8.74 1000 $8.53 10000 $8.53	Buy Now
Future Electronics	IXFH69N30P	Tube		24 Weeks	300	1 - 10 - 100 $10.11 1000 $9.94 10000 $9.94	Buy Now
TME	IXFH69N30P				1	1 $14.20 10 $14.20 100 $8.26 1000 $7.47 10000 $7.47	Get Quote
Littelfuse Inc IXFH69N30P Mosfet, N-Ch, 300V, 69A, To-247-3; \|Littelfuse IXFH69N30P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFH69N30P	Bulk			1	1 $14.08 10 $14.08 100 $14.08 1000 $14.08 10000 $14.08	Buy Now
	IXFH69N30P	Bulk			300	1 - 10 - 100 - 1000 $7.15 10000 $6.72	Buy Now
RS	IXFH69N30P	Bulk		8 Weeks	30	1 - 10 - 100 $12.36 1000 $12.36 10000 $12.36	Get Quote
Onlinecomponents.com	IXFH69N30P					1 - 10 - 100 $13.47 1000 $6.43 10000 $6.43	Buy Now

IXFH69N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode 300v Abstract: IXFH69N30P IXFT69N30P Contextual Info: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfh69n30p ixft69n30p 200ns o-247 +5o-268 100ms 69n30p 0-16-09-a diode 300v	PDF
DS99220 Abstract: IXFH69N30P IXFK69N30P Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH69N30P IXFK69N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous	Original	ixfh69n30p ixfk69n30p 69n30p ds99220	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfh69n30p ixft69n30p 200ns o-247 +4o-268 100ms 69n30p 0-16-09-a	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF