Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    IXFT69N30P Search Results

    IXFT69N30P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFT69N30P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 69A TO-268 Original PDF 5
    SF Impression Pixel

    IXFT69N30P Price and Stock

    Select Manufacturer

    IXYS Corporation IXFT69N30P

    Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFT69N30P 1
    • 1 $13.09
    • 10 $10.47
    • 100 $9.41
    • 1000 $9.41
    • 10000 $9.41
    		Get Quote
    Mouser Electronics IXFT69N30P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.28
    • 10000 $11.28
    		Get Quote
    TTI IXFT69N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.17
    • 10000 $11.17
    		Buy Now

    Littelfuse Inc IXFT69N30P

    Discmosfetn-Ch Hiperfet-Polar To-268Aa/; |Littelfuse IXFT69N30P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () IXFT69N30P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.72
    • 10000 $10.05
    		Buy Now
    IXFT69N30P Bulk 1
    • 1 $15.60
    • 10 $14.59
    • 100 $14.17
    • 1000 $12.04
    • 10000 $10.24
    		Buy Now
    RS IXFT69N30P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $15.36
    • 1000 $15.36
    • 10000 $15.36
    		Get Quote
    Onlinecomponents.com IXFT69N30P
    • 1 -
    • 10 -
    • 100 $16.74
    • 1000 $7.99
    • 10000 $7.99
    		Buy Now

    IXFT69N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode 300v

    Abstract: IXFH69N30P IXFT69N30P
    Contextual Info: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixfh69n30pixft69n30p200nso-247+5o-268100ms69n30p0-16-09-adiode 300v PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ixfh69n30pixft69n30p200nso-247+4o-268100ms69n30p0-16-09-a PDF