IXTT69N30P Search Results

IXTT69N30P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTT69N30P		IXYS	Discrete MOSFETs: Standard N-channel Types	Original	PDF	105.58KB	5

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Littelfuse Inc IXTT69N30P Trans MOSFET N-CH 300V 69A 3-Pin(2+Tab) TO-268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXTT69N30P		200		200	1 - 10 - 100 - 1000 $8.76 10000 $8.55	Buy Now
Newark ()	IXTT69N30P	Bulk			1	1 $15.38 10 $15.38 100 $15.38 1000 $15.38 10000 $15.38	Buy Now
	IXTT69N30P	Bulk			30	1 - 10 - 100 $9.43 1000 $8.84 10000 $8.64	Buy Now
RS	IXTT69N30P	Bulk		8 Weeks	30	1 - 10 - 100 $13.50 1000 $13.50 10000 $13.50	Get Quote
Onlinecomponents.com	IXTT69N30P					1 - 10 - 100 $8.44 1000 $7.54 10000 $7.16	Buy Now
IXYS Corporation IXTT69N30P MOSFETs 69 Amps 300V 0.049 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTT69N30P	Tube			30	1 - 10 - 100 $10.37 1000 $10.37 10000 $10.37	Buy Now
Bristol Electronics	IXTT69N30P		30		1	1 $9.05 10 $7.24 100 $6.79 1000 $6.79 10000 $6.79	Buy Now
Quest Components ()	IXTT69N30P		24			1 $14.06 10 $12.50 100 $11.56 1000 $11.56 10000 $11.56	Buy Now
	IXTT69N30P		24			1 $11.32 10 $8.49 100 $8.49 1000 $8.49 10000 $8.49	Buy Now
TME	IXTT69N30P				300	1 - 10 - 100 - 1000 $9.89 10000 $9.89	Get Quote

IXTT69N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	ixtt69n30p ixtq69n30p o-268 100ms +269n30p 0-16-09-a	PDF
s69a Abstract: IXTQ69N30P IXTT69N30P TO-3P Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	ixtt69n30p ixtq69n30p o-268 063in +5100ms 69n30p 0-16-09-a s69a to-3p	PDF
IXTQ69N30 Abstract: IXTQ69N30P IXTT69N30P 7V60 Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A ≤ 49 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous	Original	ixtq69n30p ixtt69n30p o-268 69n30p +2ixtq69n30 7v60	PDF
Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	ixtq69n30p ixtt69n30p o-268 69n30p	PDF
Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	ixtq69n30p ixtt69n30p o-268 69n30p	PDF
IXTQ69N30P Abstract: IXTT69N30P Contextual Info: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	ixtt69n30p ixtq69n30p o-268 063in +3100ms 69n30p 0-16-09-a	PDF