IXTQ69N30 Search Results
IXTQ69N30 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXTQ69N30 | IXYS | Original | 105.57KB | 5 | |||
| IXTQ69N30P | IXYS | Discrete MOSFETs: Standard N-channel Types | Original | 105.58KB | 5 |
IXTQ69N30 Price and Stock
Littelfuse Inc IXTQ69N30PTrans MOSFET N-CH 300V 69A 3-Pin(3+Tab) TO-3P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTQ69N30P | 295 | 7 |
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IXTQ69N30P | Bulk | 8 Weeks | 30 |
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IXTQ69N30P |
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IXTQ69N30P | 236 |
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IXYS Corporation IXTQ69N30PMosfet, N-Ch, 300V, 69A, To-3P; |Ixys Semiconductor IXTQ69N30P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTQ69N30P | Bulk | 259 | 1 |
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IXTQ69N30P | Tube | 300 |
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IXTQ69N30P | 1 |
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Littelfuse Inc IXTQ69N30PMDisc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; |Littelfuse IXTQ69N30PM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTQ69N30PM | Bulk | 300 |
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Buy Now | ||||||
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IXTQ69N30PM | Bulk | 8 Weeks | 30 |
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IXTQ69N30PM |
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IXYS Corporation IXTQ69N30PMMOSFETs TO3P 300V 69A N-CH POLAR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTQ69N30PM | Tube | 300 |
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IXTQ69N30PM | 300 |
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IXTQ69N30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXTQ69N30PM
Abstract: IXTQ69N30 ixtq69n30p
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Original |
ixtq69n30pm100ms69n30p0-16-09-a+2 | |
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Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 |
Original |
ixtt69n30pixtq69n30po-268100ms+2 | |
s69a
Abstract: IXTQ69N30P IXTT69N30P TO-3P
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Original |
ixtt69n30pixtq69n30po-268063in+5 | |
IXTQ69N30
Abstract: IXTQ69N30P IXTT69N30P 7V60
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Original |
ixtq69n30pixtt69n30po-26869n30p+2 | |
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Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25 |
Original |
ixtq69n30pixtt69n30po-26869n30p | |
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Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25 |
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ixtq69n30pixtt69n30po-26869n30p | |
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Contextual Info: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTQ69N30PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ |
Original |
ixtq69n30pm100ms69n30p0-16-09-a | |
IXTQ69N30P
Abstract: IXTT69N30P
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Original |
ixtt69n30pixtq69n30po-268063in+3 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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Original |
ao4405ao4407ao4408ao4409+16 |