IXTQ69N30P Search Results
IXTQ69N30P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXTQ69N30P |
|
Discrete MOSFETs: Standard N-channel Types | Original | 105.58KB | 5 |
IXTQ69N30P Price and Stock
IXYS Corporation IXTQ69N30PMOSFET N-CH 300V 69A TO3P |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXTQ69N30P | Tube | 1 |
|
Buy Now | ||||||
|
IXTQ69N30P | 268 |
|
Buy Now | |||||||
|
IXTQ69N30P | Bulk | 279 | 1 |
|
Buy Now | |||||
|
IXTQ69N30P | Tube | 300 |
|
Buy Now | ||||||
|
IXTQ69N30P | Tube | 300 |
|
Buy Now | ||||||
|
IXTQ69N30P | 1 |
|
Get Quote | |||||||
|
IXTQ69N30P | 300 |
|
Buy Now | |||||||
IXYS Corporation IXTQ69N30PMMOSFET N-CH 300V 25A TO3PFP |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXTQ69N30PM | Tube | 300 |
|
Buy Now | ||||||
|
IXTQ69N30PM |
|
Get Quote | ||||||||
|
IXTQ69N30PM | Tube | 300 |
|
Buy Now | ||||||
Littelfuse Inc IXTQ69N30PTrans MOSFET N-CH 300V 69A 3-Pin(3+Tab) TO-3P |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXTQ69N30P | 295 | 7 |
|
Buy Now | ||||||
|
IXTQ69N30P | Bulk | 8 Weeks | 30 |
|
Get Quote | |||||
|
IXTQ69N30P | 236 |
|
Buy Now | |||||||
Littelfuse Inc IXTQ69N30PMDisc Mosfet N-Ch Std-Polar To-3P (3)/ Tube |Littelfuse IXTQ69N30PM |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXTQ69N30PM | Bulk | 300 |
|
Buy Now | ||||||
|
IXTQ69N30PM | Bulk | 8 Weeks | 30 |
|
Get Quote | |||||
IXTQ69N30P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXTQ69N30PM
Abstract: IXTQ69N30 ixtq69n30p
|
Original |
IXTQ69N30PM 100ms 69N30P 0-16-09-A IXTQ69N30PM IXTQ69N30 ixtq69n30p | |
|
Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 |
Original |
IXTT69N30P IXTQ69N30P O-268 100ms 69N30P 0-16-09-A | |
s69a
Abstract: IXTQ69N30P IXTT69N30P TO-3P
|
Original |
IXTT69N30P IXTQ69N30P O-268 063in) 100ms 69N30P 0-16-09-A s69a IXTQ69N30P IXTT69N30P TO-3P | |
IXTQ69N30
Abstract: IXTQ69N30P IXTT69N30P 7V60
|
Original |
IXTQ69N30P IXTT69N30P O-268 69N30P IXTQ69N30 IXTQ69N30P IXTT69N30P 7V60 | |
|
Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25 |
Original |
IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P | |
|
Contextual Info: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25 |
Original |
IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P | |
|
Contextual Info: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTQ69N30PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ |
Original |
IXTQ69N30PM 100ms 69N30P 0-16-09-A | |
IXTQ69N30P
Abstract: IXTT69N30P
|
Original |
IXTT69N30P IXTQ69N30P O-268 063in) 100ms IXTQ69N30P IXTT69N30P 69N30P 0-16-09-A | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
|
Original |
AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 |