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    IXYS Corporation IXTQ69N30PM

    Transistor: N-MOSFET; 300V; 25A; 90W; TO3P; 250ns
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    TME IXTQ69N30PM 300
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    Mouser Electronics IXTQ69N30PM
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    TTI IXTQ69N30PM Tube 300
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    Littelfuse Inc IXTQ69N30PM

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; |Littelfuse IXTQ69N30PM
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    Newark IXTQ69N30PM Bulk 300
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    RS IXTQ69N30PM Bulk 8 Weeks 30
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    Onlinecomponents.com IXTQ69N30PM
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    IXTQ69N30PM Datasheets Context Search

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    IXTQ69N30PM

    Abstract: IXTQ69N30 ixtq69n30p
    Contextual Info: Advance Technical Information IXTQ69N30PM PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 300V = 25A Ω ≤ 49mΩ OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		ixtq69n30pm100ms69n30p0-16-09-a+2ixtq69n30ixtq69n30p PDF

    Contextual Info: Advance Technical Information PolarTM Power MOSFET VDSS ID25 IXTQ69N30PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTQ.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ


    Original     		ixtq69n30pm100ms69n30p0-16-09-a PDF