207B Search Results

audio amplifier la4440 dual mode

Abstract: sanyo la4440
Contextual Info: SANYO SEMICONDUCTOR CORP 7b 7997076 SANYO SEMICONDUCTOR CORP LA4422 dË| 7^707^ 76C 0 1 8 5 7 m o n o l i t h i c l i n e a r IC 0001057 3 D ~fZ r/ ^ ‘ ô tS ' ' ô l CIRCUIT D R A W IN G NO.207B 5.BW TYP AF POWER AMP. FOR CAR RADIO, CAR STEREO —— 301 8A

jack pcb

Contextual Info: TECHNICAL DATA SHEET RPC-2.92 02K247-40ML5 RIGHT ANGLE JACK PCB All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Mechanically compatible with RPC-3.50 and SMA Documents PCB layout Tape & reel packaging B 207B VG133.50000 Material and plating

Contextual Info: 207B Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: HRW1002A S Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-207B(Z) Rev 2 Oct. 1997 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Same power as TO-220AB. • Small outline compared with T 0-220AB. •

d16803

Abstract: ADE602-083 2648F Hitachi DSA00279 Bosch 5.7 abs
Contextual Info: Hitachi 16-Bit Single-Chip Microcomputer H8S/2646 Series H8S/2646 HD6432646 H8S/2645 HD6432645 H8S/2647 HD6432647 H8S/2648 HD6432648 H8S/2646R F-ZTAT HD64F2646R H8S/2648R F-ZTAT™ HD64F2648R Hardware Manual ADE-602-207B Rev. 3.0 9/17/01 Hitachi, Ltd. Cautions

Contextual Info: HRW1002A S Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-207B(Z) Rev 2 Oct. 1997 Features • • • • Low forward voltage drop and suitable for high efficiency rectifying. Same power as T0-220AB. Small outline compared with T0-220AB. LDPAK(S) package is suitable for high density surface mounting.

Contextual Info: HRW1002A S Silicon Schottky Barrier Diode for Rectifying ADE-208-207B(Z) Rev 2 Oct. 1997 Features • • • • Low forward voltage drop and suitable for high efficiency rectifying. Same power as TO-220AB. Small outline compared with TO-220AB. LDPAK(S) package is suitable for high density surface mounting.

B0500T

Abstract: 02K246-40ML5
Contextual Info: TECHNICAL DATA SHEET RPC-2.92 02K246-40ML5 RIGHT ANGLE JACK PCB All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Mechanically compatible with RPC-3.50 and SMA Documents PCB layout Tape & reel packaging B 207B VG133.50000 Material and plating

SPW 12w

Abstract: TMS380c16 RRU 32
Contextual Info: TMS380C26 NETWORK COMMPROCESSOR SPW S010A -APRIL 1992- R E V IS E D MARCH 1993 I • IEEE 802.5 and IBM Token-Ring Network Compatible • Low-Cost Host-Slave I/O Interface Option • IEEE 802.3 and Blue Book Ethernet™ Network Compatible • Selectable Host System-Bus Options

K4004

Abstract: SN75361* equivalent SN75361A SN75107 SN55109A
Contextual Info: 207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity

sn75361

Abstract: SN55109A
Contextual Info: 207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity

Contextual Info: DS16F95QML DS16F95QML EIA-485/EIA-422A Differential Bus Transceiver T ex a s In s t r u m e n t s Literature Number: SNOSANOA 9 a l DS16F95QML Sem iconductor EIA-485/EIA-422A Differential Bus Transceiver General Description The DS16F95 Differential Bus Transceiver is a monolithic in­

D1314

Abstract: SN75361 207B SN75107A SN75107B SN75207 SN75207B SN55109A
Contextual Info: SN75207, 207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS S LLS Q 69A - D1314, JULY 1973 - REVISED JANUARY 1993 □ O R N PACKAGE TO P V IE W Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics

2025h

Abstract: TDA 2052 TDA 4608 SIN227 CASH BOX GUARD circuit diagram for simple receiver 1381 voltage detector fsk modulator 8051
Contextual Info: PRELIMINARY W925E/C625 8-bit CID Microcontroller 1 GENERAL DESCRIPTION. 3 2 FEATURES . 3

470M

Contextual Info: 1. M echanical D im ensions: 2. Sch em atic: 8 .2 5 Max 1 2 .3 0 Max X o CD o CO CN 3. E lectrical Specifications:@ 25°C OCL: 4 7 u H ± 2 0 % 7 .7 0 O I.O K H z 0.1V DCR: 0 .0 5 5 6 O hm s Max 1 3 .0 0 Isat: 2 .8 0 A dc Max B ased on OCL d ro p by 10% Typ

IS62WV1288BLL-55HLI

Abstract: IS62WV1288ALL IS62WV1288ALL-70BI IS62WV1288ALL-70HI IS62WV1288BLL IS62WV1288BLL-45TI
Contextual Info: IS62WV1288ALL IS62WV1288BLL ISSI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2005 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8

SN55109A

Abstract: SN75361A 1N916 207B SN55110A SN75107A SN75107B SN75207B SN75452B SN75107
Contextual Info: 207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity

207B

Contextual Info: 1. Mechanical Dimensions: 2. S c h e m a t i c : C 1 2 .3 0 8 .2 5 Max Max X a CD a CM 3. E l e c t r i c a l S p e c i f i c a t i o n s :@ 2 5 ° C 7 .7 0 OCL: 3 3 u H ± 2 0 % 1 3 .0 0 I.O K H z Q: 2 .0 Min © I.O K H z 0.1V 0.1V DCR: 0 .0 6 4 S O hm s Max

mzp a 001 45 16

Abstract: sbr-ls 04S 224a U005 W154H
Contextual Info: TI 380C30 INTEGRATED TOKEN-RING C O M M P R O C E S S O R AND P HYSIC AL-LAYER INTERFACE SP W S 016A - NOVEMBER 1 9 9 4 - REVISED JULY 1995 S ing le-C hip T ok en -R ing Solution 8 0 x 8 x or 6 8 x x x - T y p e B u s a n d M e m o r y IBM Token-Ring N etw o rk™ Co m p atib le

Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT MAY 2004 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

SFT308

Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

SFT307

Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

diode B14A

Abstract: B14A equivalent B14A B14A diode 207B MCF5307 asynchronous dram 1J20C
Contextual Info: 06/2000 Rev. 4.0 Semiconductor Products Sector MCF5307 Errata to MCF5307 Preface This document identiÞes implementation differences between particular versions of the MCF5307 processor and the description of the MCF5307 processor contained in the MCF5307 UserÕs Manual. Please

SN55109A

Contextual Info: 207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity